Garg, Alka B. ; Vijayakumar, V. ; Godwal, B. K. ; Dorhout, P. K. ; Hochheimer, H. D. (2004) High pressure electrical transport measurements of Cs2MoS4 and KTbP2Se6 and X-ray diffraction study of Cs2MoS4 Solid State Communications, 129 (8). pp. 511-514. ISSN 0038-1098
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00381...
Related URL: http://dx.doi.org/10.1016/j.ssc.2003.11.033
Abstract
We report the results of electrical resistance measurements at high pressures on Cs2MoS4 and KTbP2Se6. The results of high pressure X-ray diffraction study of Cs2MoS4 are also presented. Interestingly, in the case of Cs2MoS4 the resistance vs. pressure follows the behavior of the absorption edge vs. pressure obtained from our optical measurements lending further support to a direct-indirect band crossing. In the case of KTbP2Se6,the phase transition at about 9.2 GPa is reflected in a sharp drop of the resistance. In addition we report the pressure dependence of the lattice constants as well as the equation of state of Cs2MoS4.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | A: Semiconductors; B: X-Ray Diffraction; C: Electronic Transport; D: High Pressure |
| ID Code: | 11713 |
| Deposited On: | 13 Nov 2010 14:00 |
| Last Modified: | 02 Jun 2011 08:53 |
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