Anil, K. G. ; Mahapatra, S. ; Eisele, I. (2001) Experimental verification of the nature of the high energy tail in the electron energy distribution in n-channel MOSFETs IEEE Electron Device Letters, 22 (10). pp. 478-480. ISSN 0741-3106
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Official URL: http://ieeexplore.ieee.org/abstract/document/95491...
Related URL: http://dx.doi.org/10.1109/55.954917
Abstract
Sensitive quantum-yield Measurements (M) on n-channel MOSFETs for drain voltages (VD) near the bandgap voltage of silicon, showed an abnormal bell-shaped M versus gate voltage (VG) characteristic at 77 K. At higher VD, M decreases monotonously with increasing VG. Measured data is interpreted based on the general nature of electron energy distribution published by Monte-Carlo simulation groups and provide simultaneous experimental verification for the presence of a tail that depends strongly on lattice temperature and Electron-electron Interaction (EEI) broadening of the tail. Our data suggest EEI broadening of the tail even in the subthreshold regime.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| ID Code: | 112714 |
| Deposited On: | 09 Apr 2018 10:55 |
| Last Modified: | 09 Apr 2018 10:55 |
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