Anil, K. G. ; Mahapatra, S. ; Eisele, I. (2002) Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of n-channel silicon MOSFETs IEEE Transactions on Electron Devices, 49 (7). pp. 1283-1288. ISSN 0018-9383
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Official URL: http://ieeexplore.ieee.org/abstract/document/10132...
Related URL: http://dx.doi.org/10.1109/TED.2002.1013287
Abstract
Impact ionization at low drain voltages in n-MOSFETs was investigated employing devices with three different channel-doping profiles. We report an anomalous peak in substrate current (ISUB) versus gate voltage (VG) characteristics. It is shown that the anomalous peak cannot be directly related to any high field region in the device. The measured data is interpreted based on the general nature of electron energy distribution published by Monte-Carlo simulation groups. Strong evidence is provided which suggest that the anomalous peak in ISUB versus VC is due to electron-electron interactions.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronic Engineers. |
| ID Code: | 112713 |
| Deposited On: | 09 Apr 2018 10:51 |
| Last Modified: | 09 Apr 2018 10:51 |
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