Saha, D. ; Varghese, D. ; Mahapatra, S. (2006) Role of anode hole injection and valence band hole tunneling on interface trap generation during Hot Carrier Injection stress IEEE Electron Device Letters, 27 (7). pp. 585-587. ISSN 0741-3106
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Official URL: http://ieeexplore.ieee.org/document/1644835/
Related URL: http://dx.doi.org/10.1109/LED.2006.876310
Abstract
Interface trap (NIT) generation and recovery due to broken Si-H bonds at the Si/SiO2 interface is studied during and after Hot Carrier Injection (HCI) stress and verified by a two-dimensional reaction-diffusion model. NIT generation and recovery characteristics do not correlate with channel Hot Electron (HE) density distribution (verified by Monte Carlo simulations). Anode hole injection, which is triggered by HE injection into the gate poly, and valence band hole tunneling, which is triggered for thinner oxides, must be invoked to properly explain experimental results. The observed hole-induced, not electron-induced, breaking of Si-H bonds during HCI stress is also consistent with that for negative bias temperature instability stress.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| Keywords: | Valence-Band-Hole Tunneling (VBHT); Anode Hole Injection (AHI); Charge Pumping (CP); Hot Carrier Injection (HCI); Interface Traps; Reaction-Diffusion (R-D) Model |
| ID Code: | 112709 |
| Deposited On: | 09 Apr 2018 10:45 |
| Last Modified: | 09 Apr 2018 10:45 |
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