Saha, D. ; Varghese, D. ; Mahapatra, S. (2006) On the generation and recovery of hot carrier induced interface traps: A critical examination of the 2-D R-D model IEEE Electron Device Letters, 27 (3). pp. 188-190. ISSN 0741-3106
Full text not available from this repository.
Official URL: http://ieeexplore.ieee.org/document/1599475/?secti...
Related URL: http://dx.doi.org/10.1109/LED.2006.870241
Abstract
The generation and recovery of interface traps (NIT) during and after hot carrier injection stress is evaluated by the recently proposed two-dimensional (2-D) reaction diffusion (R-D) model. The power law time exponent (n) of NIT generation as well as the magnitude of fractional and absolute recovery after the stress cannot be fully explained by considering only the spatial extent of broken Si-H bonds, as is done by 2-D R-D model. Additional contribution due to broken Si-O bonds also plays a major role in determining the overall NIT generation and recovery behavior.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| Keywords: | Reaction Diffusion Model; Charge Pumping; Hot Carrier Injection; Interface Traps |
| ID Code: | 112706 |
| Deposited On: | 06 Apr 2018 05:48 |
| Last Modified: | 06 Apr 2018 05:48 |
Repository Staff Only: item control page
