Sridhar, K. ; Bharath Kumar, P. ; Mahapatra, S. ; Murakami, E. ; Kamohara, S. (2005) Controlling injected electron and hole profiles for better reliability of split gate SONOS In: 2005 Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2005, 27 June-1 July, 2005, Singapore, Singapore.
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Official URL: http://ieeexplore.ieee.org/document/1469159/
Related URL: http://dx.doi.org/10.1109/IPFA.2005.1469159
Abstract
SONOS memory cell using a split gate structure is studied using simulations. The dependence of channel Hot Electron (HE) and Hot Hole (HH) profiles (during program and erase) on bias, doping and program gate length (LPG) is studied. The effect of trapped charge position on the threshold voltage is also studied. LPG is found to be crucial in minimizing the mismatch of HE and HH profiles as the regions of their generation are separate. Program gate voltage during program and erase is found to be the key bias for spatially adjusting the HE and HH profiles.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| ID Code: | 112660 |
| Deposited On: | 12 Apr 2018 07:22 |
| Last Modified: | 12 Apr 2018 07:22 |
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