Kumar, P. B. ; Sharma, R. ; Nair, P. R. ; Nair, D. R. ; Kamohara, S. ; Mahapatra, S. ; Vasi, J. (2005) Mechanism of drain disturb in SONOS flash EEPROMs In: 2005 43rd Annual IEEE International Reliability Physics Symposium. Proceedings, 17-21 April, 2005, San Jose, CA, USA.
Full text not available from this repository.
Official URL: http://ieeexplore.ieee.org/document/1493082/
Related URL: http://dx.doi.org/10.1109/RELPHY.2005.1493082
Abstract
We investigate the mechanism of drain disturb in SONOS flash memory cells. Our results show that drain disturb can be a serious concern in a programmed state and is caused by injection of holes from the substrate into the nitride. We identify the key factors responsible for this to be band-to-band tunneling at the drain junction and impact ionization of the channel leakage current.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| ID Code: | 112659 |
| Deposited On: | 12 Apr 2018 07:22 |
| Last Modified: | 12 Apr 2018 07:22 |
Repository Staff Only: item control page
