Mechanism of drain disturb in SONOS flash EEPROMs

Kumar, P. B. ; Sharma, R. ; Nair, P. R. ; Nair, D. R. ; Kamohara, S. ; Mahapatra, S. ; Vasi, J. (2005) Mechanism of drain disturb in SONOS flash EEPROMs In: 2005 43rd Annual IEEE International Reliability Physics Symposium. Proceedings, 17-21 April, 2005, San Jose, CA, USA.

Full text not available from this repository.

Official URL:

Related URL:


We investigate the mechanism of drain disturb in SONOS flash memory cells. Our results show that drain disturb can be a serious concern in a programmed state and is caused by injection of holes from the substrate into the nitride. We identify the key factors responsible for this to be band-to-band tunneling at the drain junction and impact ionization of the channel leakage current.

Item Type:Conference or Workshop Item (Paper)
Source:Copyright of this article belongs to Institute of Electrical and Electronics Engineers.
ID Code:112659
Deposited On:12 Apr 2018 07:22
Last Modified:12 Apr 2018 07:22

Repository Staff Only: item control page