Nainani, A. ; Palit, S. ; Singh, P. K. ; Ganguly, U. ; Krishna, N. ; Vasi, J. ; Mahapatra, S. (2007) Development of A 3D simulator for metal Nanocrystal (NC) flash memories under NAND operation In: 2007 IEEE International Electron Devices Meeting, IEDM 2007, 10-12 Dec, 2007, Washington, DC, USA.
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Official URL: http://ieeexplore.ieee.org/document/4419109/?reloa...
Related URL: http://dx.doi.org/10.1109/IEDM.2007.4419109
Abstract
A 3D simulator for metal Nanocrystal (NC) flash is developed and verified with published experimental data. The simulator is capable of extracting physical parameters and predicting their impact on cell performance. The simulator is used to optimize cell design and analyze performance with scaling, NC randomness and NC number fluctuations.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| ID Code: | 112632 |
| Deposited On: | 12 Apr 2018 07:22 |
| Last Modified: | 12 Apr 2018 07:22 |
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