Deora, Shweta ; Mahapatra, Souvik (2008) A study of NBTI in HfSiON/TiN p-MOSFETs using ultra-fast on-the-fly (UF-OTF) IDLIN technique In: 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 7-11 July, 2008, Singapore, Singapore.
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Official URL: http://ieeexplore.ieee.org/document/4588200/
Related URL: http://dx.doi.org/10.1109/IPFA.2008.4588200
Abstract
Negative Bias Temperature Instability (NBTI) is studied in HfSiON/TiN p-MOSFETs having thin (2 nm) and thick (3 nm) HfSiON layer on top of 1 nm SiO2 interfacial layer. By using ultra fast on the fly IDLIN technique, the impact of stress temperature (T) and oxide field (EOX) on NBTI time evolution is studied. The thickness of the HfSiON layer is shown to have negligible impact on time, T and EOX dependence of NBTI. The impact of time-zero (t0) delay on power law time exponent (n), EOX acceleration (Γ) of degradation and EOX acceleration (β) of time to fail (ttF) is also studied. The t0 does not impact Γ but strongly impacts n, β and hence extracted safe operating voltage (VGSAFE).
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| ID Code: | 112604 |
| Deposited On: | 12 Apr 2018 08:05 |
| Last Modified: | 12 Apr 2018 08:05 |
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