Deora, S. ; Maheta, V. D. ; Mahapatra, S. (2010) NBTI lifetime prediction in SiON p-MOSFETs by H/H2 Reaction-Diffusion (RD) and dispersive hole trapping model In: 2010 IEEE International Conference on Reliability Physics Symposium (IRPS), 2-6 May, 2010, Anaheim, CA, USA.
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Official URL: http://ieeexplore.ieee.org/document/5488665/
Related URL: http://dx.doi.org/10.1109/IRPS.2010.5488665
Abstract
IDLIN shift due to NBTI is measured using UF-OTF IDLIN method in PNO, RTNO and RTNO+PN SiON p-MOSFETs having a wide range of EOT and %N. Time evolution of IDLIN shift at different stress EOX and T is modeled from ultra-short to long stress time using non-dispersive H/H2 RD model governed NIT and dispersive Nh components. NIT and Nh model parameters show consistent EOX and T dependent behavior across all devices. Finally, extrapolated ttF values are obtained for different EOX from conventional power-law fit and the proposed model, and are compared across different measurement delay. Inconsistencies associated with conventional power-law fit extrapolation method are highlighted, which justifies the use of proposed model
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| Keywords: | Reaction-Diffusion (RD) Model; NBTI; Sion; PNO; PNA; RTNO; Hole Trapping; Interface Traps |
| ID Code: | 112598 |
| Deposited On: | 11 Apr 2018 12:17 |
| Last Modified: | 11 Apr 2018 12:17 |
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