Pandey, R. ; Agrawal, N. ; Chobpattana, V. ; Henry, K. ; Kuhn, M. ; Liu, H. ; Labella, M. ; Eichfeld, C. ; Wang, K. ; Maier, J. ; Stemmer, S. ; Mahapatra, S. ; Datta, S. (2015) Tunnel junction abruptness, source random dopant fluctuation and PBTI induced variability analysis of GaAs0.4Sb0.6/In0.65Ga0.35As heterojunction tunnel FETs In: 2015 IEEE International Conference on Electron Devices Meeting (IEDM), 7-9 Dec. 2015, Washington, DC, USA.
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Official URL: http://ieeexplore.ieee.org/document/7409694/
Related URL: http://dx.doi.org/10.1109/IEDM.2015.7409694
Abstract
We present reliability analysis of the two most critical interfaces in III-V Heterojunction Tunnel FET (HTFET) design: (1) Tunnel Heterojunction is characterized in three-dimensional atomic scale resolution using Atom Probe Tomography. We explore the impact of tunnel junction abruptness and source dopant fluctuations on HTFET performance; (2) Extremely scaled Hi-K gate dielectric (sub-0.8 nm EOT: HfO2, HfO2-ZrO2 bilayer and ZrO2)/III-V channel interface is evaluated using Positive Bias Temperature Instability (PBTI) measurements. HfO2 based HTFET exhibits superior PBTI performance over ZrO2 based HTFET and shows lifetime improvement over III-V FinFET.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| ID Code: | 112569 |
| Deposited On: | 11 Apr 2018 11:05 |
| Last Modified: | 11 Apr 2018 11:05 |
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