Agrawal, Nidhi ; Agrawal, Ashish ; Mukhopadhyay, Subhadeep ; Mahapatra, Souvik ; Datta, Suman (2015) Electron trapping dominance in strained germanium quantum well planar and FinFET devices with NBTI In: 2015 73rd Annual Device Research Conference (DRC), 21-24 June 2015, Columbus, OH, USA.
Full text not available from this repository.
Official URL: http://ieeexplore.ieee.org/document/7175686/
Related URL: http://dx.doi.org/10.1109/DRC.2015.7175686
Abstract
We perform a comparative study of Negative Bias Temperature Instability (NBTI) reliability on compressively strained Germanium (s-Ge) Quantum Well (QW) Planar and FinFET p-type devices. We see electron trapping from the gate electrode in all these devices with applied negative stress. FinFETs show less ΔVT than Planar but with 1.8 times higher stress time exponent (n) and slower recovery rate than Planar. Also, Δgm/gm0 of FinFETs improves with increasing stress.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| ID Code: | 112567 |
| Deposited On: | 11 Apr 2018 11:01 |
| Last Modified: | 11 Apr 2018 11:01 |
Repository Staff Only: item control page
