Combined trap generation and transient trap occupancy model for time evolution of NBTI during DC multi-cycle and AC stress

Goel, Nilesh ; Naphade, Tejas ; Mahapatra, Souvik (2015) Combined trap generation and transient trap occupancy model for time evolution of NBTI during DC multi-cycle and AC stress In: 2015 IEEE International Conference on Reliability Physics Symposium (IRPS), 19-23 April 2015, Monterey, CA, USA.

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Official URL: http://ieeexplore.ieee.org/document/7112725/

Related URL: http://dx.doi.org/10.1109/IRPS.2015.7112725

Abstract

A transient trap occupancy model is proposed to determine the charged state of generated NIT in real time during successive stress (pulse ON) and recovery (pulse OFF) cycles for DC and AC NBTI stress. The model converts ΔNIT (trap density) to compute the ΔVIT (voltage shift) subcomponent of overall ΔVT; time evolution of ΔNIT is obtained using numerical RD simulation for multi-cycle DC and low f AC, and a calibrated compact model for high f AC stress to reduce simulation time. A cyclostationary stretched exponential model is used for the ΔVHT subcomponent of ΔVT. The complete model is used to predict time evolution of ΔVT (= ΔVIT + ΔVHT), measured using Ultra-Fast MSM method in HKMG p-MOSFETs for multiple and completely arbitrary DC stress and recovery cycles and for AC stress at different duty, f and pulse low bias. Finally a compact model is proposed, which is capable of providing AC/DC ratio at fixed time and compared to the transient model for different gate activity.

Item Type:Conference or Workshop Item (Paper)
Source:Copyright of this article belongs to Institute of Electrical and Electronics Engineers.
Keywords:Compact Model; NBTI; Trap Generation; Trap Occupancy; Transient Model
ID Code:112566
Deposited On:11 Apr 2018 10:58
Last Modified:11 Apr 2018 10:58

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