Parihar, Narendra ; Southwick, Richard G. ; Sharma, Uma ; Wang, Miaomiao ; Stathis, James H ; Mahapatra, Souvik (2017) Comparison of DC and AC NBTI kinetics in RMG Si and SiGe p-FinFETs In: 2017 IEEE International Conference on Reliability Physics Symposium (IRPS), 2-6 April 2017, Monterey, CA, USA.
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Official URL: http://ieeexplore.ieee.org/abstract/document/79362...
Related URL: http://dx.doi.org/10.1109/IRPS.2017.7936264
Abstract
An ultrafast characterization method is used to study DC and AC NBTI in Si and SiGe channel core RMG p-FinFETs. The time evolution of degradation during and after stress, and the impact of stress bias, temperature, frequency and duty cycle are characterized. A physics-based model is used to qualitatively explain measured data. The similarities and differences of DC and AC NBTI in Si and SiGe channel devices are highlighted.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| Keywords: | NBTI; Si Channel; SiGe Channel; RMG FinFETs |
| ID Code: | 112559 |
| Deposited On: | 09 Apr 2018 11:27 |
| Last Modified: | 09 Apr 2018 11:27 |
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