The impact of nitrogen engineering in silicon oxynitride gate dielectric on Negative-bias Temperature Instability of p-MOSFETs: A study by ultrafast on-the-fly IDLIN technique

Maheta, Vrajesh D. ; Olsen, Christopher ; Ahmed, Khaled ; Mahapatra, Souvik (2008) The impact of nitrogen engineering in silicon oxynitride gate dielectric on Negative-bias Temperature Instability of p-MOSFETs: A study by ultrafast on-the-fly IDLIN technique IEEE Transactions on Electron Devices, 55 (7). pp. 1630-1638. ISSN 0018-9383

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Official URL: http://ieeexplore.ieee.org/document/4545044/

Related URL: http://dx.doi.org/10.1109/TED.2008.923524

Abstract

Degradation of p-MOSFET parameters during Negative-bias Temperature Instability (NBTI) stress is studied for different nitridation conditions of the Silicon Oxynitride (SiON) gate dielectric, using a recently developed ultrafast on-the-fly IDLIN technique having 1-mus resolution. It is shown that the degradation magnitude, as well as its time, temperature, and field dependence, is governed by Nitrogen (N) density at the Si/SiON interface. The relative contribution of interface trap generation and hole trapping to overall degradation as varying interfacial N density is qualitatively discussed. Plasma oxynitride films having low interfacial N density show interface trap dominated degradation, whereas relative hole trapping contribution increases for thermal oxynitride films having high N density at the Si/SiON interface.

Item Type:Article
Source:Copyright of this article belongs to Institute of Electrical and Electronic Engineers.
Keywords:Thermal Oxynitride; Device Degradation; Hole Trapping; Interface Traps; Negative-bias Temperature Instability (NBTI); On-the-fly (OTF) IDLIN; Plasma Oxynitride; p-MOSFETs
ID Code:112501
Deposited On:02 Apr 2018 07:58
Last Modified:02 Apr 2018 07:58

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