Isolation of NBTI stress generated interface trap and hole-trapping components in PNO p-MOSFETs

Abstract

In this paper, a simple phenomenological technique is used to isolate the hole-trapping and interface trap generation components during Negative Bias Temperature Instability (NBTI) stress in Plasma Nitrided Oxide (PNO) p-MOSFETs. This isolation methodology reconciles the apparent differences between experimentally measured NBTI power-law time exponents obtained by ultrafast on-the-fly I_DLIN method, which are the ones obtained using slightly delayed but very long-time measurements and the corresponding exponents predicted by the reaction-diffusion model. A systematic validation of the isolation technique is provided through degradation data taken over a broad range of operating conditions and a wide variety of PNO processes, to establish the robustness and uniqueness of the separation procedure.