Agrawal, Nidhi ; Thathachary, Arun V. ; Mahapatra, Souvik ; Datta, Suman (2015) Impact of varying indium(x) concentration and quantum confinement on PBTI reliability in InxGa1-xAs FinFET IEEE Electron Device Letters, 36 (2). pp. 120-122. ISSN 0741-3106
Full text not available from this repository.
Official URL: http://ieeexplore.ieee.org/document/6994742/
Related URL: http://dx.doi.org/10.1109/LED.2014.2385055
Abstract
In this letter, we present a comparative study of Positive Bias Temperature Instability (PBTI) reliability in InxGa1-xAs FinFET with varying Indium (x = 0.53 , 0.70) percentage and quantization [bulk, Quantum Well (QW)]. Due to lower effective transport mass and higher injection velocity, In0.7Ga0.3As QW FinFET provides better performance than In0.53Ga0.47As bulk FinFET. However, stronger quantization lowers the effective barrier height between the carriers and defect density in the oxide causing degraded PBTI reliability in the former. Our preliminary PBTI stress study shows that In0.7Ga0.3As QW FinFETs may need to operate at a gate overdrive of 0.1 V (i.e. near threshold operation) to meet 10 years of reliability specifications at 85°C.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| Keywords: | Time to Failure (TTF); III-V FinFET; Positive Bias Temperature Instability (PBTI); Quantum Well |
| ID Code: | 112484 |
| Deposited On: | 02 Apr 2018 06:28 |
| Last Modified: | 02 Apr 2018 06:28 |
Repository Staff Only: item control page
