Oxide circle formation at silicon–polymer interface

Bhattacharya, Mishreyee ; Sanyal, Milan K. (2006) Oxide circle formation at silicon–polymer interface Applied Surface Science, 252 (23). pp. 8301-8308. ISSN 0169-4332

Full text not available from this repository.

Official URL: http://www.sciencedirect.com/science/article/pii/S...

Related URL: http://dx.doi.org/10.1016/j.apsusc.2005.10.058

Abstract

We demonstrate that precipitation of implanted erbium ions at silicon–polymer interface initiates oxidation reaction of Si (1 0 0) surface at room temperature. Oxidation reaction starts through spontaneous formation of circular patches of SiOx and the diameter of these circles grows uniformly with time and touch each other to cover the entire surface by keeping the thickness of these patches almost fixed at 4 nm. The nucleation and in-plane growth rates of SiOx circles are found to be dependent on the fluence of erbium-implantation, the condition of substrate and can be controlled by controlling oxygen partial pressure of the environment. In addition to the precipitation of erbium ions at silicon–polymer interface, enhancement of concentration of erbium ions was observed at periodic depths within polymer film confirming that in ultra-thin films polymer molecules form layers parallel to substrate surface due to confinement.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:Polymer Film; Erbium Implantation; SiOx Pattern Formation
ID Code:111464
Deposited On:30 Nov 2017 11:57
Last Modified:30 Nov 2017 11:57

Repository Staff Only: item control page