X-ray reflectivity study of semiconductor interfaces

Sanyal, M. K. ; Datta, A. ; Banerjee, S. ; Srivastava, A. K. ; Arora, B. M. ; Kanakaraju, S. ; Mohan, S. (1997) X-ray reflectivity study of semiconductor interfaces Journal of Synchrotron Radiation, 4 (3). pp. 185-190. ISSN 0909-0495

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Official URL: http://journals.iucr.org/s/issues/1997/03/00/

Related URL: http://dx.doi.org/10.1107/S0909049596015312


The results of an X-ray reflectivity study of thick AlAs-AlGaAs and thin Ge-Si-Ge multilayers grown using metal-organic vapour-phase epitaxy and ion-beam sputtering deposition techniques, respectively, are presented. Asymmetry in interfaces is observed in both of these semiconductor multilayers. It is also observed that although the Si-on-Ge interface is sharp, an Si0.4Ge0.6 alloy is formed at the Ge-on-Si interface. In the case of the III-V semiconductor, the AlAs-on-AlGaAs interface shows much greater roughness than that observed in the AlGaAs-on-AlAs interface. For thin multilayers it is demonstrated that the compositional profile as a function of depth can be obtained directly from the X-ray reflectivity data.

Item Type:Article
Source:Copyright of this article belongs to International Union of Crystallography.
Keywords:X-ray Reflectivity; Semiconductor Multilayers; Interfacial Diffusion
ID Code:111394
Deposited On:30 Nov 2017 11:57
Last Modified:30 Nov 2017 11:57

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