Selective disorder in the CuO basal planes of YBa2Cu3O7-y by swift heavy ion induced secondary electrons

Biswal, R. ; John, J. ; Avasthi, D. K. ; Kanjilal, D. ; Raychaudhuri, P. ; Mishra, N. C. (2010) Selective disorder in the CuO basal planes of YBa2Cu3O7-y by swift heavy ion induced secondary electrons Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 268 (20). pp. 3325-3330. ISSN 0168-583X

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Official URL: http://www.sciencedirect.com/science/article/pii/S...

Related URL: http://dx.doi.org/10.1016/j.nimb.2010.07.008

Abstract

In situ temperature dependent resistivity, ρ(T) study on c-axis oriented YBa2Cu3O7-y thin films irradiated with 200 MeV Ag ions at 79 K is shown to induce point defects in addition to amorphous ion tracks. Annealing characteristics of these defects indicate that the point defects are basically oxygen disorder selectively created in the CuO basal planes of YBa2Cu3O7-y structure by secondary electrons emanating from the path of 200 MeV Ag ions. These electrons are shown to create defects by inelastic interaction process. Contrary to the general expectation, we show that the superconducting transition temperature, Tc is suppressed at a rate two orders of magnitude faster at extremely low fluences where ion tracks are far apart from each other than at high fluences where tracks tend to overlap. The transition width on the other hand remains unaffected while resistivity shows a large increase at high fluences. At high fluences, a two-step superconducting transition emerged, which indicate the evolution of two types of superconducting regions with distinctly different Tcs.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:Swift Heavy Ion Irradiation; Superconducting Thin Films; Secondary Electrons; Point Defects
ID Code:105158
Deposited On:25 Dec 2017 11:59
Last Modified:25 Dec 2017 11:59

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