Electroresistive effects in electron doped manganite La0.7Ce0.3MnO3 thin films

Bajaj, Kavita ; Jesudasan, John ; Bagwe, Vivas ; Kothari, D. C. ; Raychaudhuri, P. (2007) Electroresistive effects in electron doped manganite La0.7Ce0.3MnO3 thin films Journal of Physics: Condensed Matter, 19 (4). Article ID 046208. ISSN 0953-8984

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Official URL: http://iopscience.iop.org/article/10.1088/0953-898...

Related URL: http://dx.doi.org/10.1088/0953-8984/19/4/046208


The influence of electric current on the transport behaviour of La0.7Ce0.3MnO3 thin epitaxial films on (001) LaAlO3 substrate is studied. Measurements were carried out in the regime of low current densities (0.0325–32.5 A cm-2), for dc current in the absence of magnetic field. Significant reduction of the peak resistance (Rp) with monotonic increase in the metal–insulator transition temperature (Tp) was found with increasing bias current. The voltage current characteristics at various temperatures above and below Tp show nonlinearity for small currents. The behaviours of the resistance with the current are similar at various temperatures: an initial decrease with increasing current and then a levelling off. The magnetoresistance (MR) measurement under a field of 1 T revealed that it is maximum at the temperature near Tp at which the electroresistance (ER) is also maximum. The variation of resistance with electric field and magnetic field is non-hysteretic. We explain the origin of the observed ER and MR in our samples on the basis of double-exchange interaction and the phase separation phenomenon.

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