Conductive atomic force microscopy of In As/Ga As quantum rings

Mlakar, Tomaz ; Biasiol, Giorgio ; Heun, Stefan ; Sorba, Lucia ; Vijaykumar, T. ; Kulkarni, G. U. ; Spreafico, Vittorio ; Prato, Stefano (2008) Conductive atomic force microscopy of In As/Ga As quantum rings Applied Physics Letters, 92 (19). Article ID 192105. ISSN 0003-6951

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Official URL: http://aip.scitation.org/doi/abs/10.1063/1.2928220...

Related URL: http://dx.doi.org/10.1063/1.2928220

Abstract

The properties of self-assembled InAs∕GaAs quantum rings are investigated by conductive atomic force microscopy. Our two-dimensional current maps and current-voltage curves show a lower conductivity of the central ring hole as compared to rim and surrounding planar region. This result is quite surprising if we take into account the compositional profile of quantum rings: being the region with the highest In concentration, one would expect the central hole to be the region with the highest conductivity. However, including the presence of a surface oxide into numerical simulations yields consistent results, which show the same qualitative behavior as the measured conductivities.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:Quantum Dots; Electric Measurements; Surface Conductivity; III-V Semiconductors; Oxide Surfaces
ID Code:103048
Deposited On:28 Feb 2017 16:21
Last Modified:22 Mar 2017 08:31

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