Kurra, Narendra ; Vijaykumar, T. ; Kulkarni, G. U. (2011) CNT manipulation: inserting a carbonaceous dielectric layer beneath using electron beam induced deposition Journal of Nanoscience and Nanotechnology, 11 (2). pp. 1025-1029. ISSN 1533-4880
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Official URL: http://www.ingentaconnect.com/content/asp/jnn/2011...
Related URL: http://dx.doi.org/10.1166/jnn.2011.3112
Abstract
Electron beam induced carbonaceous deposition has been carried out in the presence of water vapor at 0.4 torr pressure amidst residual hydrocarbons present in the SEM chamber. When performed at a CNT location on a Si substrate with low e beam energy (10 kV), the deposition was taking place beneath the CNT. While higher beam energy (25 kV) causing the deposition on the top surface of the CNT, in agreement with the earlier reports. The insertion of dielectric carbonaceous layer beneath the CNT allowed us to measure the I–V data along the length of the nanotube using CAFM.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Scientific Publishers. |
| Keywords: | Carbonaceous Deposition; CNT Circuits; Conducting AFM; Electron Beam Induced Deposition; Electron Beam Lithography |
| ID Code: | 102866 |
| Deposited On: | 04 Mar 2017 12:49 |
| Last Modified: | 04 Mar 2017 12:49 |
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