Mahadevan, Priya ; Zunger, Alex (2004) Trends in ferromagnetism, hole localization, and acceptor level depth for Mn substitution in GaN, GaP, GaAs, and GaSb Applied Physics Letters, 85 (14). Article ID 2860. ISSN 0003-6951
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Official URL: http://aip.scitation.org/doi/10.1063/1.1799245
Related URL: http://dx.doi.org/10.1063/1.1799245
Abstract
We examine the intrinsic mechanism of ferromagnetism in dilute magnetic semiconductors by analyzing the trends in the electronic structure as the host is changed from GaN to GaSb, keeping the transition metal impurity fixed. In contrast with earlier interpretations which depended on the host semiconductor, it is found that a single mechanism is sufficient to explain the ferromagnetic stabilization energy for the entire series.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | III-V Semiconductors; Ferromagnetism; Ferromagnetic Materials; Antiferromagnetism; Semiconductors |
| ID Code: | 102863 |
| Deposited On: | 02 Feb 2018 03:54 |
| Last Modified: | 02 Feb 2018 03:54 |
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