Ferroelectric distortions in doped ferroelectrics: BaTiO3:M(M=V−Fe)

Chandra, Hirak Kumar ; Gupta, Kapil ; Nandy, Ashis Kumar ; Mahadevan, Priya (2013) Ferroelectric distortions in doped ferroelectrics: BaTiO3:M(M=V−Fe) Physical Review B: Condensed Matter and Materials Physics, 87 (21). Article ID 214110. ISSN 2469-9950

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Official URL: http://journals.aps.org/prb/abstract/10.1103/PhysR...

Related URL: http://dx.doi.org/10.1103/PhysRevB.87.214110


A major challenge in the search for multiferroic materials among transition metal compounds has been that ferroelectricity is primarily found in d0 materials while magnetism is found in dn systems. Considering a well-known ferroelectric oxide, namely BaTiO3, the question we asked within a theoretical study was whether ferroelectric distortions disappeared for the slightest amount of doping. Surprisingly, in the case of V-doped BaTiO3, ferroelectricity was found to be stronger than in the undoped limit. Another surprise was that the presence of charged impurities rather than free carriers was found to be most detrimental to the presence of ferroelectric distortions. These ideas of the low doping limit were used to design alternative multiferroics.

Item Type:Article
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ID Code:102852
Deposited On:02 Feb 2018 03:56
Last Modified:02 Feb 2018 03:56

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