Field-effect transistors based on thermally treated electron beam-induced carbonaceous patterns

Kurra, Narendra ; Bhadram, Venkata Srinu ; Narayana, Chandrabhas ; Kulkarni, G. U. (2012) Field-effect transistors based on thermally treated electron beam-induced carbonaceous patterns ACS Applied Materials & Interfaces, 4 (2). pp. 1030-1036. ISSN 1944-8244

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Official URL: http://pubs.acs.org/doi/abs/10.1021/am201668v

Related URL: http://dx.doi.org/10.1021/am201668v

Abstract

Electron beam-induced carbonaceous deposition (EBICD) derived from residual hydrocarbons in the vacuum chamber has many fascinating properties. It is known to be chemically complex but robust, structurally amorphous, and electrically insulating. The present study is an attempt to gain more insight into its chemical and electrical nature based on detailed measurements such as Raman, XPS, TEM, and electrical. Interestingly, EBIC patterns are found to be blue fluorescent when excited with UV radiation, a property which owes much to sp2 carbon clusters amidst sp3 matrix. Temperature-dependent Raman and electrical measurements have confirmed the graphitization of the EBICD through the decomposition of functional groups above 300 °C. Finally, graphitized EBIC patterns have been employed as active p-type channel material in the field-effect transistors to obtain mobilities in the range of 0.2–4 cm2/V s.

Item Type:Article
Source:Copyright of this article belongs to American Chemical Society.
Keywords:Amorphous Carbon; Electron Beam-induced Deposition; Field-effect Transistor; Field-induced Mobility; Graphitization
ID Code:102791
Deposited On:04 Mar 2017 13:09
Last Modified:04 Mar 2017 13:09

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