Pal, Atindra Nath ; Ghosh, Arindam (2009) Resistance noise in graphene based field effect devices In: Proceedings of the 20th International Conference on Noise and Fluctuations, June 14–19, 2009, Pisa, Italy.
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Official URL: http://scitation.aip.org/content/aip/proceeding/ai...
Abstract
We present a low‐frequency electrical noise measurement in graphene based field effect transistors. For Single Layer Graphene (SLG), the resistance fluctuations is governed by the screening of the charge impurities by the mobile charges. However, in case of Bilayer Graphene (BLG), the electrical noise is strongly connected to its band structure and unlike Single Layer Graphene, displays a minimum when the gap between the conduction and valence band is zero. Using double gated BLG devices we have tuned the zero gap and charge neutrality points independently, which offers a versatile mechanism to investigate the low‐energy band structure, charge localization and screening properties of Bilayer Graphene.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 101551 |
| Deposited On: | 01 Feb 2018 10:06 |
| Last Modified: | 01 Feb 2018 10:06 |
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