Transport through an electrostatically defined quantum dot lattice in a two-dimensional electron gas

Goswami, Srijit ; Aamir, M. A. ; Siegert, Christoph ; Pepper, Michael ; Farrer, Ian ; Ritchie, David A. ; Ghosh, Arindam (2012) Transport through an electrostatically defined quantum dot lattice in a two-dimensional electron gas Physical Review B: Condensed Matter and Materials Physics, 85 (7). Article ID 075427. ISSN 1098-0121

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Official URL: http://journals.aps.org/prb/abstract/10.1103/PhysR...

Related URL: http://dx.doi.org/10.1103/PhysRevB.85.075427

Abstract

Quantum Dot Lattices (QDLs) have the potential to allow for the tailoring of optical, magnetic and electronic properties of a user-defined artificial solid. We use a dual gated device structure to controllably tune the potential landscape in a GaAs/AlGaAs two-dimensional electron gas, thereby enabling the formation of a periodic QDL. The current-voltage characteristics, I(V), follow a power law, as expected for a QDL. In addition, a systematic study of the scaling behavior of I(V) allows us to probe the effects of background disorder on transport through the QDL. Our results are particularly important for semiconductor-based QDL architectures which aim to probe collective phenomena.

Item Type:Article
Source:Copyright of this article belongs to American Physical Society.
ID Code:101523
Deposited On:01 Feb 2018 10:05
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