Role of Pb for Ag growth on H-passivated Si(1 0 0) surfaces

Mathew, S. ; Satpati, B. ; Joseph, B. ; Dev, B. N. (2005) Role of Pb for Ag growth on H-passivated Si(1 0 0) surfaces Applied Surface Science, 249 (1-4). pp. 31-37. ISSN 0169-4332

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We have deposited Ag on hydrogen passivated Si(1 0 0) surfaces under high vacuum conditions at room temperature. The deposition, followed by annealing at 250 °C for 30 min, produced silver islands of an average lateral size 36±14 nm. Depositing a small amount of Pb prior to Ag deposition reduced the average island size to 14±5 nm. A small amount of Pb, initially present at the Ag-Si interface, is found to be segregating to the surface of Ag after annealing. Both these aspects, namely, reduction of the island size and Pb floating on the Ag surface conform to the surfactant action of Pb. Samples have been characterized by transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS). A selective etching process that preferentially removes Pb, in conjunction with RBS, was used to detect surface segregation of Pb involving depth scales below the resolution of conventional RBS. The annealing and etching process leaves only smaller Ag islands on the surface with complete removal of Pb. Ag growth in the presence of Pb leads to smaller Ag islands with a narrower size distribution.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:Ag Nanoislands on Si; Surfactant Effect in Island Size Reduction; Transmission Electron Microscopy (TEM); Rutherford Backscattering Spectrometry (RBS); Hydrogen Passivation
ID Code:10140
Deposited On:02 Nov 2010 10:55
Last Modified:30 May 2011 05:44

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