Sundaravel, B. ; Das, Amal K. ; Ghose, S. K. ; Rout, B. ; Dev, B. N. (1999) Improvement of Ag(1 1 1) epitaxy on Si(1 1 1) by mev si+ irradiation and ion microbeam analysis of thermally induced morphology Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 156 (1-4). pp. 130-134. ISSN 0168-583X
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S01685...
Related URL: http://dx.doi.org/10.1016/S0168-583X(99)00281-5
Abstract
Epitaxial Ag(1 1 1) thin films (~125 nm) have been grown on Br-passivated Si(1 1 1) surfaces under high vacuum. Growth features observed from XRD, RBS/channeling and TEM/TED experiments are comparable to those grown under UHV conditions. RBS/channeling measurements on the Ag layer showed a minimum yield (χmin) of 62% indicating a poor crystalline quality. We irradiated the Ag(1 1 1) layer with 1 MeV Si+ at fluences of 5×1015 and 1×1016 ions/cm2 with the substrate at room temperature and an ion current density of 50 nA/cm2. Following irradiation, the measured χmin values are 40% and 38%, respectively, indicating an improvement in crystalline quality of the Ag layer. This behaviour is also seen in thermal annealing upto 500°C due to some grain boundary melting. In thermal annealing at ≥600°C desorption of Ag occurs leaving holes in the Ag layer. Morphology of the annealed layer has been analyzed with RBS/PIXE studies with an ion microbeam of He+ ions.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 10127 |
| Deposited On: | 02 Nov 2010 10:42 |
| Last Modified: | 30 May 2011 05:57 |
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