Dev, B. N. ; Materlik, G. ; Johnson, R. L. ; Kranz, W. ; Funke, P. (1986) X-ray standing wave studies of germanium adsorbed on Si(111) surfaces Surface Science, 178 (1-3). pp. 1-9. ISSN 0039-6028
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/003960...
Related URL: http://dx.doi.org/10.1016/0039-6028(86)90274-8
Abstract
The positions of germanium atoms adsorbed on Si(111) surfaces have been determined with X-ray standing waves. Ge atoms have been found to occupy the atop site and/or vacancies in the inner layer of the substrate surface bilayer for the (1 × 1) superstructure. For the (7 × 7) structure, our results support the dimer adatom stacking-fault model of Takayanagi et al. for the bare silicon surface. Ge atoms occupy the surface-atop and the adatom-atop sites on this structure. A higher binding energy for the surface-atop site is indicated from the growth of germanium at different substrate temperatures.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 10126 |
| Deposited On: | 02 Nov 2010 10:40 |
| Last Modified: | 30 May 2011 06:09 |
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