Radiation damage and surface modification of GaAs(0 0 1) by MeV C+ and C2+ co-implantation with Ga2+

Ghose, S. K. ; Kuri, G. ; Das, Amal K. ; Rout, B. ; Mahapatra, D. P. ; Dev, B. N. (1999) Radiation damage and surface modification of GaAs(0 0 1) by MeV C+ and C2+ co-implantation with Ga2+ Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 156 (1-4). pp. 125-129. ISSN 0168-583X

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S01685...

Related URL: http://dx.doi.org/10.1016/S0168-583X(99)00280-3

Abstract

Radiation damage and Surface modifications of semi-insulating GaAs(0 0 1) substrates upon 1 MeV C+ and 2 MeV C2+ coimplantation with Ga2+ have been studied by X-ray reflectometry, combined Rutherford backscattering/channeling and transmission electron microscopy. Two disordered layers - one near-surface and another deeper - are formed. Additionally the electron density of the near-surface region has been found to be lower compared to bulk GaAs. This has been attributed to vacancy-enrichment in this region. The disorder caused by C2 implantation is higher compared to C. Assuming that the near-surface disorder is partially caused by electronic excitation in the semi-insulating substrate, a possible reason for this difference is the coherent dynamic response of the electrons in the target due to vicinage of C atoms in the C2 cluster. In the deeper layer, overlap of damage cascades might be responsible for the higher damage caused in the cluster implantation.

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