Epitaxy driven fractal growth

Sekar, K. ; Kuri, G. ; Satyam, P. V. ; Sundaravel, B. ; Mahapatra, D. P. ; Dev, B. N. (1995) Epitaxy driven fractal growth Solid State Communications, 96 (11). pp. 871-875. ISSN 0038-1098

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/003810...

Related URL: http://dx.doi.org/10.1016/0038-1098(95)80105-7


Fractal structures of Au with an average dimension of 1.69± 0.06 with concomitant growth of epitaxial gold silicide islands have been observed in Au thin films prepared by vacuum evaporation of Au on bromine-passivated Si(111) substrates and subsequent annealing around the Au---Si eutectic temperature. When a thin (native) silicon oxide layer is present at the interface, neither the epitaxial islands nor the Au fractals are observed. Results of simulations based on diffusion-limited-aggregation using Witten-Sander model agree with the measured dimension. The observed fractal structures are not isotropic. The directional growth of the fractal patterns is apparently related to the shape and alignment of the silicide islands.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:A. Semiconductors; Metals; Surfaces and Interfaces; B. Epitaxy
ID Code:10070
Deposited On:02 Nov 2010 09:54
Last Modified:30 May 2011 06:02

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