Satpati, B. ; Goswami, D. K. ; Vaishnav, U. D. ; Som, T. ; Dev, B. N. ; Satyam, P. V. (2003) Energy spike induced effects in mev ion-irradiated nanoislands Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 212 . pp. 157-163. ISSN 0168-583X
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S01685...
Related URL: http://dx.doi.org/10.1016/S0168-583X(03)01453-8
Abstract
Transmission electron microscopy (TEM), atomic force microscopy (AFM) and Rutherford backscattering spectrometry (RBS) have been used to study the modification of Au nanoislands, grown on silicon substrates under high vacuum condition by MeV self-ion irradiation. Upon irradiation with 1.5 MeV Au2+ ions, interesting observations were found for the nanoislands in comparison with continuous films: (i) higher probability of crater formation, (ii) larger sputtered particle size as well as coverage and (iii) enhanced sputtering yield. Crater formation has been studied as a function of impact angle at a fluence of 1 × 1014 ions cm-2 and we found that crater formation is prominent at high impact angles (i.e. at glancing angle geometry). AFM has been used to determine the crater formation, TEM to study the sputtered particles as well as craters and RBS has been used to determine the sputtering yield from the nanoisland and continuous films.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | MeV Ions; Ion-irradiation; Crater Formation and Energy Spike |
| ID Code: | 10063 |
| Deposited On: | 02 Nov 2010 09:55 |
| Last Modified: | 30 May 2011 05:47 |
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