Goswami, D. K. ; Bhattacharjee, K. ; Satpati, B. ; Roy, S. ; Satyam, P. V. ; Dev, B. N. (2007) Preferential heights in the growth of ag islands on si(1 1 1)-(7 × 7) surfaces Surface Science, 601 (3). pp. 603-608. ISSN 0039-6028
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00396...
Related URL: http://dx.doi.org/10.1016/j.susc.2006.10.026
Abstract
Growth behavior of thin Ag films on Si substrates at room temperature has been investigated by scanning tunneling microscopy and reflection high energy electron diffraction. In the layer-plus-island growth Ag islands show strongly preferred atomic scale heights and flat top. At low coverage (1 ML), islands containing two atomic layers of Ag are overwhelmingly formed. At higher coverages island height distribution shows strong peaks at relative heights corresponding to an even number (2, 4, 6,..) of Ag atomic layers. Beyond some coverage the height preference vanishes due to the appearance of screw dislocations and spiral growth.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | Overlayers on Surfaces; Scanning Tunneling Microscopy; Preferential Heights in Island Growth; Ag Growth on Si |
| ID Code: | 10054 |
| Deposited On: | 02 Nov 2010 09:58 |
| Last Modified: | 30 May 2011 05:40 |
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