Epitaxial growth of silver on br-passivated si(111) substrates under high vacuum

Sundaravel, B. ; Das, A. K. ; Ghose, S. K. ; Sekar, K. ; Dev, B. N. (1999) Epitaxial growth of silver on br-passivated si(111) substrates under high vacuum Applied Surface Science, 137 (1-4). pp. 11-19. ISSN 0169-4332

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S01694...

Related URL: http://dx.doi.org/10.1016/S0169-4332(98)00484-X

Abstract

Ag thin films (~125 nm) were deposited on Br-passivated vicinal (4° miscut) Si(111) surfaces at room temperature under high vacuum conditions. The films have been characterized by Rutherford backscattering spectrometry (RBS) and channeling, X-ray diffraction and transmission electron microscopy and diffraction measurements. The [111] axis of the Ag epilayer is tilted from the substrate [111] orientation by 0.4° towards the substrate surface normal. The films are grainy with a mosaic spread of 0.74°. The crystal quality of the Ag layer improves and the mosaic spread decreases to 0.37° upon annealing in high vacuum at higher temperatures (400 and 500°C) as observed from RBS/channeling and high resolution X-ray diffraction measurements. The tilt angle of the Ag[111] axis and the layer strain also decrease to some extent upon annealing at 500°C.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:Epitaxy; Mosaic Spread; Strain; Grain Coarsening
ID Code:10045
Deposited On:02 Nov 2010 10:03
Last Modified:30 May 2011 05:58

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