Sharma, N. C. ; Chopra, K. L. (1980) Electronic properties of Pb1-xHgxS-Si heterojunctions Solid State Electronics, 23 (8). pp. 869-873. ISSN 0038-1101
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/003811...
Related URL: http://dx.doi.org/10.1016/0038-1101(80)90104-5
Abstract
Two types of heterojunctions have been prepared by electroless deposition of Pb1-xHgxS (x = 0-0.33) films with α' and β' structures on n-type silicon single crystal substrates. Functional behaviour of the forward characteristics is explained on the basis of band to band tunnelling coupled with the recombination processes. The energy band diagram is given for both types of Pb1-xHgxS/Si heterojunctions in agreement with the experimental results.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 22961 |
| Deposited On: | 25 Nov 2010 13:46 |
| Last Modified: | 28 May 2011 05:34 |
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