A study of electronic and bonding properties of Sn doped Lin clusters and aluminum based binary clusters through electron localization function

Shetty, Sharan ; Pal, Sourav ; Kanhere, D. G. (2003) A study of electronic and bonding properties of Sn doped Lin clusters and aluminum based binary clusters through electron localization function Journal of Chemical Physics, 118 (16). 7288_1-7288_9. ISSN 1674-0068

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Official URL: http://jcp.aip.org/resource/1/jcpsa6/v118/i16/p728...

Related URL: http://dx.doi.org/10.1063/1.1562944

Abstract

We have carried out a thorough investigation of bonding and energetics in two different class of heteroatomic clusters viz. single impurity based LinSn (n ≤ 9) clusters and mixed aluminum-based binary clusters Al4X4 (X=Be, Mg, B, Si). We employ first principle Born-Oppenheimer molecular dynamics within the framework of density functional theory using generalized gradient approximation. The bonding characteristics have been analyzed using electron localization function (ELF) along with charge density and valence molecular orbital pictures. The analysis of bonding through ELF reveals that in LinSn (n ≤ 9) clusters there is a transition from ionic bond to a metallic bond through an intermediate ionic-metallic bond. On the other hand, it is found that Al4X4 (X=Be, Mg, B, Si) clusters show interesting characteristics of lone pairs on Al, polar covalent bonding, and a multicenter bonding. We demonstrate that ELF can play an important role in analyzing different types of bonding characteristics in heteroatomic clusters.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
ID Code:16090
Deposited On:15 Nov 2010 14:14
Last Modified:03 Jun 2011 06:20

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