Banerjee, Chandan ; Sarker, Arindam ; Barua, Asok K. (2002) Comparison of structural and optoelectronic properties of N-type microcrystalline silicon and silicon oxide films with lowering of thickness Japanese Journal of Applied Physics, 41 . pp. 952-955. ISSN 1347-4065
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Official URL: http://jjap.ipap.jp/link?JJAP/41/L952/
Related URL: http://dx.doi.org/10.1143/JJAP.41.L952
Abstract
We have compared the structural and optoelectronic properties of n-type microcrystalline hydrogenated silicon oxide (n-μc-SiO:H) and n-type microcrystalline hydrogenated silicon (n-μc-Si:H) films with lowering of thickness, prepared by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD, 13.56 MHz) method. At thickness ≤ 300 Å, the n-μc-SiO:H film has higher optical gap (E05) and lower optical absorption while retaining the photoconductivity (σph) and activation energy (Ea) similar to those for n-μc-Si:H film. Due to these advantages of n-μc-SiO:H film over that of n-μc-Si:H at low thickness this material has potential for use in improving the performance of single and double junction amorphous silicon solar cells.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Pure and Applied Physics. |
| Keywords: | RF-PECVD; Microcrystalline Silicon; Hydrogenated Silicon Oxide; Thickness Dependence; Transmission Electron Microscopy (TEM); Raman Spectroscopy |
| ID Code: | 1552 |
| Deposited On: | 05 Oct 2010 12:18 |
| Last Modified: | 13 May 2011 09:27 |
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