Kapila, G. ; Goyal, N. ; Maheta, V. D. ; Olsen, C. ; Ahmed, K. ; Mahapatra, S. (2008) A comprehensive study of flicker noise in plasma nitrided SiON p-MOSFETs: process dependence of pre-existing and NBTI stress generated trap distribution profiles In: 2008 IEEE International Conference on Electron Devices Meeting (IEDM), 15-17 Dec, 2008, San Francisco, CA, USA.
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Official URL: http://ieeexplore.ieee.org/document/4796625/
Related URL: http://dx.doi.org/10.1109/IEDM.2008.4796625
Abstract
Flicker noise is studied in SiON p-MOSFETs before and after NBTI stress. Pre-stress noise magnitude and slope are correlated and used to verify N density distribution in gate dielectric. Post-stress noise magnitude and slope are used to explore distribution of trap generation during NBTI stress, and independently verified by using MFCP measurements. Consequence of N distribution (in SiON) on NBTI stress and recovery results is shown.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| ID Code: | 112602 |
| Deposited On: | 12 Apr 2018 08:00 |
| Last Modified: | 12 Apr 2018 08:00 |
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