Ningthoujam, Raghumani Singh ; Vatsa, Rajesh Kumar ; Vinu, Ajayan ; Ariga, Katsuhiko ; Tyagi, Avesh Kumar (2009) Room temperature exciton formation in SnO2 nanocrystals in SiO2: Eu matrix: quantum dot system, heat-treatment effect Journal of Nanoscience and Nanotechnology, 9 (4). pp. 2634-2638. ISSN 1533-4880
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Official URL: http://www.ingentaconnect.com/content/asp/jnn/2009...
Related URL: http://dx.doi.org/10.1166/jnn.2009.dk05
Abstract
SnO2 nanocrystals in SiO2:Eu matrix have been prepared at a relatively low temperature of 170 °C for 4 h. Selective transition probability of Eu3+ emission could be done after a suitable excitation wavelength. The room temperature exciton formation at 285 nm for as-prepared nanoparticles is observed and this gives the Bohr's radius of 1.4 nm. Exciton formation disappears for the nanoparticles heated at 500 and 900 °C. This is related to the increase in particle size with heat-treatment. A wide-band-gap (4.35 eV) quantum dots is obtained and will be important in photonics and UV-lasing application.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Scientific Publishers. |
| Keywords: | Bohr's Radius; Exciton Formation; Luminescence; Quantum Dots; SnO2 Nanocrystals |
| ID Code: | 108125 |
| Deposited On: | 01 Feb 2018 11:31 |
| Last Modified: | 01 Feb 2018 11:31 |
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