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Choudhury, Nilotpal ; Parihar, Narendra ; Goel, Nilesh ; Thirunavukkarasu, A. ; Mahapatra, Souvik (2020) Modeling of DC - AC NBTI Stress - Recovery Time Kinetics in P-Channel Planar Bulk and FDSOI MOSFETs and FinFETs IEEE Journal of the Electron Devices Society, 8 . pp. 1281-1288. ISSN 2168-6734

Mahapatra, Souvik ; Parihar, Narendra (2020) Modeling of NBTI Using BAT Framework: DC-AC Stress-Recovery Kinetics, Material, and Process Dependence IEEE Transactions on Device and Materials Reliability, 20 (1). pp. 4-23. ISSN 1530-4388

Kumar, Satyam ; Anandkrishnan, R. ; Parihar, Narendra ; Mahapatra, Souvik (2020) A Stochastic Framework for the Time Kinetics of Interface and Bulk Oxide Traps for BTI, SILC, and TDDB in MOSFETs IEEE Transactions on Electron Devices, 67 (11). pp. 4741-4748. ISSN 0018-9383

Tiwari, Ravi ; Parihar, Narendra ; Thakor, Karansingh ; Wong, Hiu Yung ; Motzny, Steve ; Choi, Munkang ; Moroz, Victor ; Mahapatra, Souvik (2019) A 3-D TCAD Framework for NBTI, Part-II: Impact of Mechanical Strain, Quantum Effects, and FinFET Dimension Scaling IEEE Transactions on Electron Devices, 66 (5). pp. 2093-2099. ISSN 0018-9383

Tiwari, Ravi ; Parihar, Narendra ; Thakor, Karansingh ; Wong, Hiu Yung ; Motzny, Steve ; Choi, Munkang ; Moroz, Victor ; Mahapatra, Souvik (2019) A 3-D TCAD Framework for NBTI—Part I: Implementation Details and FinFET Channel Material Impact IEEE Transactions on Electron Devices, 66 (5). pp. 2086-2092. ISSN 0018-9383

Parihar, Narendra ; Anandkrishnan, R ; Chaudhary, Ankush ; Mahapatra, Souvik (2019) A Comparative Analysis of NBTI Variability and TDDS in GF HKMG Planar p-MOSFETs and RMG HKMG p-FinFETs IEEE Transactions on Electron Devices, 66 (8). pp. 3273-3278. ISSN 0018-9383

Goyal, Natasha ; Mahapatra, Souvik ; Lodha, Saurabh (2019) Ultrafast Characterization of Hole Trapping Near Black Phosphorus–SiO2 Interface During NBTI Stress in 2-D BP p-FETs IEEE Transactions on Electron Devices, 66 (11). pp. 4572-4577. ISSN 0018-9383

Parihar, Narendra ; Goel, Nilesh ; Mukhopadhyay, Subhadeep ; Mahapatra, Souvik (2018) BTI analysis tool - Modeling of NBTI DC, AC stress and recovery time kinetics, nitrogen impact and EOL estimation IEEE Transactions on Electron Devices, 65 (2). pp. 392-403. ISSN 0018-9383

Parihar, Narendra ; Sharma, Uma ; Southwick, Richard G. ; Wang, Miaomiao ; Stathis, James H. ; Mahapatra, Souvik (2018) Ultrafast measurements and physical modeling of NBTI stress and recovery in RMG FinFETs under diverse DC–AC experimental conditions IEEE Transactions on Electron Devices, 65 (1). pp. 23-30. ISSN 0018-9383

Mukhopadhyay, Subhadeep ; Parihar, Narendra ; Goel, Nilesh ; Mahapatra, Souvik (2017) A comprehensive DC and AC PBTI modeling framework for HKMG n-MOSFETs IEEE Transactions on Electron Devices, 64 (4). pp. 1474-1481. ISSN 0018-9383

Chaudhary, Ankush ; Fernandez, Beryl ; Parihar, Narendra ; Mahapatra, Souvik (2017) Consistency of the two component composite modeling framework for NBTI in large and small area p-MOSFETs IEEE Transactions on Electron Devices, 64 (1). pp. 256-263. ISSN 0018-9383

Mahapatra, Souvik ; Parihar, Narendra ; Mishra, Subrat ; Fernandez, Beryl ; Chaudhary, Ankush (2017) A BTI Analysis Tool (BAT) to simulate p-MOSFET ageing under diverse experimental conditions In: 2017 IEEE Conference on Electron Devices Technology and Manufacturing Conference (EDTM), 28 Feb.-2 March 2017, Toyama, Japan.

Parihar, Narendra ; Southwick, Richard G. ; Sharma, Uma ; Wang, Miaomiao ; Stathis, James H ; Mahapatra, Souvik (2017) Comparison of DC and AC NBTI kinetics in RMG Si and SiGe p-FinFETs In: 2017 IEEE International Conference on Reliability Physics Symposium (IRPS), 2-6 April 2017, Monterey, CA, USA.

Wong, Hiu Yung ; Motzny, Steve ; Moroz, Victor ; Mishra, Subrat ; Mahapatra, Souvik (2017) FinFET NBTI degradation reduction and recovery enhancement through hydrogen incorporation and self-heating In: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 7-9 Sept. 2017, Kamakura, Japan.

Amrouch, Hussam ; Mishra, Subrat ; van Santen, Victor ; Mahapatra, Souvik ; Henkel, Jorg (2017) Impact of BTI on dynamic and static power: From the physical to circuit level In: 2017 IEEE International Conference on Reliability Physics Symposium (IRPS), 2-6 April 2017, Monterey, CA, USA.

Mishra, Subrat ; Wong, Hiu Yung ; Tiwari, Ravi ; Chaudhary, Ankush ; Parihar, Narendra ; Rao, Rakesh ; Motzny, Steve ; Moroz, Victor ; Mahapatra, Souvik (2017) Predictive TCAD for NBTI stress-recovery in various device architectures and channel materials In: 2017 IEEE International Conference on Reliability Physics Symposium (IRPS), 2-6 April 2017, Monterey, CA, USA.

Parihar, Narendra ; Sharma, Uma ; Mukhopadhyay, Subhadeep ; Goel, Nilesh ; Chaudhary, Ankush ; Rao, Rakesh ; Mahapatra, Souvik (2017) Resolution of disputes concerning the physical mechanism and DC/AC stress/recovery modeling of Negative Bias Temperature Instability (NBTI) in p-MOSFETs In: 2017 IEEE International Conference on Reliability Physics Symposium (IRPS), 2-6 April 2017, Monterey, CA, USA.

Joishi, Chandan ; Kothari, Shraddha ; Ghosh, Sayantan ; Mukhopadhyay, Subhadeep ; Mahapatra, Souvik ; Lodha, Saurabh (2017) Ultrafast PBTI characterization on Si-free gate last Ge nFETs with stable and ultrathin Al₂O₃ IL In: 2017 IEEE International Conference on Reliability Physics Symposium (IRPS), 2-6 April 2017, Monterey, CA, USA.

Mishra, Subrat ; Wong, Hiu Yung ; Tiwari, Ravi ; Chaudhary, Ankush ; Rao, Rakesh ; Moroz, Victor ; Mahapatra, Souvik (2016) TCAD-based predictive NBTI framework for sub-20-nm node device design considerations IEEE Transactions on Electron Devices, 63 (12). pp. 4624-4631. ISSN 0018-9383

Mukhopadhyay, Subhadeep ; Goel, Nilesh ; Mahapatra, Souvik (2016) A comparative study of NBTI and PBTI using different experimental techniques IEEE Transactions on Electron Devices, 63 (10). pp. 4038-4045. ISSN 0018-9383

Mishra, Subrat ; Mahapatra, Souvik (2016) On the impact of time-zero variability, variable NBTI and stochastic TDDB on SRAM cells IEEE Transactions on Electron Devices, 63 (7). pp. 2764-2770. ISSN 0018-9383

Parihar, Narendra ; Goel, Nilesh ; Chaudhary, Ankush ; Mahapatra, Souvik (2016) A modeling framework for NBTI degradation under dynamic voltage and frequency scaling IEEE Transactions on Electron Devices, 63 (3). pp. 946-953. ISSN 0018-9383

van Santen, Victor M. ; Amrouch, Hussam ; Parihar, Narendra ; Mahapatra, Souvik ; Henkel, Jorg (2016) Aging-aware voltage scaling In: 2016 Design, Automation & Test in Europe Conference & Exhibition (DATE), 14-18 March 2016, Dresden, Germany.

Mukhopadhyay, Subhadeep ; Mahapatra, Souvik (2015) An experimental perspective of trap generation under BTI stress IEEE Transactions on Electron Devices, 62 (7). pp. 2092-2097. ISSN 0018-9383

Agrawal, Nidhi ; Thathachary, Arun V. ; Mahapatra, Souvik ; Datta, Suman (2015) Impact of varying indium(x) concentration and quantum confinement on PBTI reliability in In_xGa_1-xAs FinFET IEEE Electron Device Letters, 36 (2). pp. 120-122. ISSN 0741-3106

Goel, Nilesh ; Naphade, Tejas ; Mahapatra, Souvik (2015) Combined trap generation and transient trap occupancy model for time evolution of NBTI during DC multi-cycle and AC stress In: 2015 IEEE International Conference on Reliability Physics Symposium (IRPS), 19-23 April 2015, Monterey, CA, USA.

Agrawal, Nidhi ; Agrawal, Ashish ; Mukhopadhyay, Subhadeep ; Mahapatra, Souvik ; Datta, Suman (2015) Electron trapping dominance in strained germanium quantum well planar and FinFET devices with NBTI In: 2015 73rd Annual Device Research Conference (DRC), 21-24 June 2015, Columbus, OH, USA.

Goel, N. ; Dubey, P. ; Kawa, J. ; Mahapatra, S. (2015) Impact of time-zero and NBTI variability on sub-20 nm FinFET based SRAM at low voltages In: 2015 IEEE International Conference on Reliability Physics Symposium (IRPS), 19-23 April 2015, Monterey, CA, USA.

Chaudhary, A. ; Kaczer, B. ; Roussel, P. J. ; Chiarella, T. ; Horiguchi, N. ; Mahapatra, S. (2015) Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI In: 2015 IEEE International Conference on Reliability Physics Symposium (IRPS), 19-23 April 2015, Monterey, CA, USA.

Pandey, R. ; Agrawal, N. ; Chobpattana, V. ; Henry, K. ; Kuhn, M. ; Liu, H. ; Labella, M. ; Eichfeld, C. ; Wang, K. ; Maier, J. ; Stemmer, S. ; Mahapatra, S. ; Datta, S. (2015) Tunnel junction abruptness, source random dopant fluctuation and PBTI induced variability analysis of GaAs_0.4Sb_0.6/In_0.65Ga_0.35As heterojunction tunnel FETs In: 2015 IEEE International Conference on Electron Devices Meeting (IEDM), 7-9 Dec. 2015, Washington, DC, USA.

Goel, N. ; Joshi, K. ; Mukhopadhyay, S. ; Nanaware, N. ; Mahapatra, S. (2014) A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs Microelectronics Reliability, 54 (3). pp. 491-519. ISSN 0026-2714

Joshi, Kaustubh ; Mukhopadhyay, Subhadeep ; Goel, Nilesh ; Nanware, Nirmal ; Mahapatra, Souvik (2014) A detailed study of gate insulator process dependence of NBTI using a compact model IEEE Transactions on Electron Devices, 61 (2). pp. 408-415. ISSN 0018-9383

Naphade, T. ; Verma, P. ; Goel, N. ; Mahapatra, S. (2014) DC/AC BTI variability of SRAM circuits simulated using a physics-based compact model In: 2014 IEEE International Conference on Reliability Physics Symposium, 1-5 June, 2014, Waikoloa, HI, USA.

Mukhopadhyay, S. ; Joshi, K. ; Chaudhary, V. ; Goel, N. ; De, S. ; Pandey, R. K. ; Murali, K. V. R. M. ; Mahapatra, S. (2014) Trap Generation in IL and HK layers during BTI/TDDB stress in scaled HKMG N and P MOSFETs In: 2014 IEEE International Conference on Reliability Physics Symposium, 1-5 June, 2014, Waikoloa, HI, USA.

Goel, N. ; Mukhopadhyay, S. ; Nanaware, N. ; De, S. ; Pandey, R. K. ; Murali, K. V. R. M. ; Mahapatra, S. (2014) A comprehensive DC/AC model for ultra-fast NBTI in deep EOT scaled HKMG p-MOSFETs In: 2014 IEEE International Conference on Reliability Physics Symposium, 1-5, June 2014, Waikoloa, HI, USA.

Goel, Nilesh ; Nanaware, Nirmal ; Mahapatra, Souvik (2013) Ultrafast AC–DC NBTI characterization of deep IL scaled HKMG p-MOSFETs IEEE Electron Device Letters, 34 (12). pp. 1476-1478. ISSN 0741-3106

Mahapatra, Souvik ; De, Sandip ; Joshi, Kaustubh ; Mukhopadhyay, Subhadeep ; Pandey, Rajan K. ; Murali, K. V. R. M. (2013) Understanding process impact of hole traps and NBTI in HKMG p-MOSFETs using measurements and atomistic simulations IEEE Electron Device Letters, 34 (8). pp. 963-965. ISSN 0741-3106

Chaudhary, Ankush ; Mahapatra, Souvik (2013) A physical and SPICE mobility degradation analysis for NBTI IEEE Transactions on Electron Devices, 60 (7). pp. 2096-2103. ISSN 0018-9383

Mahapatra, S. ; Goel, N. ; Desai, S. ; Gupta, S. ; Jose, B. ; Mukhopadhyay, S. ; Joshi, K. ; Jain, A. ; Islam, A. E. ; Alam, M. A. (2013) A comparative study of different physics-based NBTI models IEEE Transactions on Electron Devices, 60 (3). pp. 901-916. ISSN 0018-9383

Joshi, K. ; Hung, S. ; Mukhopadhyay, S. ; Sato, T. ; Bevan, M. ; Rajamohanan, B. ; Wei, A. ; Noori, A. ; McDougall, B. ; Ni, C. ; Lazik, C. ; Saheli, G. ; Liu, P. ; Chu, D. ; Date, L. ; Datta, S. ; Brand, A. ; Swenberg, J. ; Mahapatra, S. (2013) Scaled gate stacks for sub-20-nm CMOS logic applications through integration of thermal IL and ALD HfOx IEEE Electron Device Letters, 34 (1). pp. 3-5. ISSN 0741-3106

Joshi, K. ; Hung, S. ; Mukhopadhyay, S. ; Chaudhary, V. ; Nanaware, N. ; Rajamohnan, B. ; Sato, T. ; Bevan, M. ; Wei, A. ; Noori, A. ; McDougal, B. ; Ni, C. ; Saheli, G. ; Lazik, C. ; Liu, P. ; Chu, D. ; Date, L. ; Datta, S. ; Brand, A. ; Swenberg, J. ; Mahapatra, S. (2013) HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation In: 2013 IEEE International Conference on Reliability Physics Symposium (IRPS), 14-18 April, 2013, Anaheim, CA, USA.

Naphade, T. ; Goel, N. ; Nair, P. R. ; Mahapatra, S. (2013) Investigation of stochastic implementation of Reaction Diffusion (RD) models for NBTI related interface trap generation In: 2013 IEEE International Conference on Reliability Physics Symposium (IRPS), 14-18 April 2013, Anaheim, CA, USA.

Desai, S. ; Mukhopadhyay, S. ; Goel, N. ; Nanaware, N. ; Jose, B. ; Joshi, K. ; Mahapatra, S. (2013) A comprehensive AC/DC NBTI model: Stress, recovery, frequency, duty cycle and process dependence In: 2013 IEEE International Conference on Reliability Physics Symposium (IRPS), 14-18 April, 2013, Anaheim, CA, USA.

Naphade, T. ; Roy, K. ; Mahapatra, S. (2013) A novel physics-based variable NBTI simulation framework from small area devices to 6T-SRAM In: 2013 IEEE International Conference on Electron Devices Meeting (IEDM), 9-11 Dec, 2013, Washington, DC, USA.

Yang, Jiaqi ; Masuduzzaman, Muhammad ; Joshi, Kaustubh ; Mukhopadhyay, Subhadeep ; Kang, Jinfeng ; Mahapatra, Souvik ; Alam, Muhammad A. (2012) Intrinsic correlation between PBTI and TDDB degradations in nMOS HK/MG dielectrics In: 2012 IEEE International Conference on Reliability Physics Symposium (IRPS), 15-19 April, 2012, Anaheim, CA, USA.

Lwin, Z. Z. ; Pey, K. L. ; Zhang, Q. ; Bosman, M. ; Liu, Q. ; Gan, C. L. ; Singh, P. K. ; Mahapatra, S. (2012) Study of charge distribution and charge loss in dual-layer metal-nanocrystal-embedded high-κ/SiO₂ gate stack Applied Physics Letters, 100 (19). Article ID 193109. ISSN 0003-6951

Chen, Y. N. ; Goh, K. E. J. ; Wu, X. ; Lwin, Z. Z. ; Singh, P. K. ; Mahapatra, S. ; Pey, K. L. (2012) Temperature-dependent relaxation current on single and dual layer Pt metal nanocrystal-based Al₂O₃/SiO₂ gate stack Journal of Applied Physics, 112 (10). Article ID 104503. ISSN 0021-8979

Gupta, Shashank ; Jose, Binoy ; Joshi, Kaustubh ; Jain, Ankit ; Alam, Muhammad Ashraful ; Mahapatra, Souvik (2012) A comprehensive and critical re-assessment of 2-stage energy level NBTI model In: 2012 IEEE International Conference on Reliability Physics Symposium (IRPS), 15-19 April, 2012, Anaheim, CA, USA.

Joshi, Kaustubh ; Mukhopadhyay, Subhadeep ; Goel, Nilesh ; Mahapatra, Souvik (2012) A consistent physical framework for N and P BTI in HKMG MOSFETs In: 2012 IEEE International Conference on Reliability Physics Symposium (IRPS).

Mahapatra, Souvik ; Goel, Nilesh ; Joshi, Kaustubh (2012) A physics based model for NBTI in p-MOSFETs In: 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 29 Oct.-1 Nov. 2012, Xi'an, China.

Deora, S. ; Narayanasetti, P. ; Thakkar, M. ; Mahapatra, S. (2011) Development of a novel ultrafast direct threshold voltage (UF-DV_T) technique to study NBTI stress and recovery IEEE Transactions on Electron Devices, 58 (10). pp. 3506-3513. ISSN 0018-9383

Dongaonkar, Sourabh ; Y., Karthik ; Mahapatra, Souvik ; Alam, Muhammad A. (2011) Physics and statistics of non-ohmic shunt conduction and metastability in amorphous silicon p–i–n solar cells IEEE Journal of Photovoltaics, 1 (2). pp. 111-117. ISSN 2156-3381

Lwin, Zin Zar ; Pey, Kin Leong ; Raghavan, Nagarajan ; Chen, Yining ; Mahapatra, Souvik (2011) New leakage mechanism and dielectric breakdown layer detection in metal-nanocrystal-embedded dual-layer memory gate stack IEEE Electron Device Letters, 32 (6). pp. 800-802. ISSN 0741-3106

Mahapatra, S. ; Islam, A. E. ; Deora, S. ; Maheta, V. D. ; Joshi, K. ; Alam, M. A. (2011) Characterization and modeling of NBTI stress, recovery, material dependence and AC degradation using R-D framework In: 2011 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 4-7 July, 2011, Incheon, South Korea.

Dongaonkar, Sourabh ; Alam, Muhammad A. ; Karthik, Y. ; Mahapatra, Souvik ; Wang, Dapeng ; Frei, Michel (2011) Identification, characterization and implications of shadow degradation in thin film solar cells In: 2011 IEEE International Reliability Physics Symposium (IRPS), 10-14 April, 2011, Monterey, CA, USA.

Lwin, Z. Z. ; Pey, K. L. ; Liu, C. ; Liu, Q. ; Zhang, Q. ; Chen, Y. N. ; Singh, P. K. ; Mahapatra, S. (2011) Localized charge trapping and lateral charge diffusion in metal nanocrystal-embedded High-κ/SiO₂ gate stack Applied Physics Letters, 99 (22). Article ID 222102. ISSN 0003-6951

Chen, Y. N. ; Pey, K. L. ; Goh, K. E. J. ; Lwin, Z. Z. ; Singh, P. ; Mahapatra, S. (2011) Study of automatic recovery on the metal nanocrystal-based Al₂O₃/SiO₂ gate stack Applied Physics Letters, 98 (8). Article ID 083504. ISSN 0003-6951

Mahapatra, S. ; Islam, A. E. ; Deora, S. ; Maheta, V. D. ; Joshi, K. ; Jain, A. ; Alam, M. A. (2011) A critical re-evaluation of the usefulness of R-D framework in predicting NBTI stress and recovery In: 2011 IEEE International Conference on Reliability Physics Symposium (IRPS), 10-14 April, 2011, Monterey, CA, USA.

Dongaonkar, Sourabh ; Karthik, Y. ; Mahapatra, Souvik ; Alam, Muhammad A. (2011) A physical model for non-ohmic shunt conduction and metastability in amorphous silicon p-i-n solar cells In: 2011 37th IEEE Photovoltaic Specialists Conference (PVSC), 19-24 June ,2011, Seattle, WA, USA.

Dongaonkar, Sourabh ; Y., Karthik ; Wang, Dapeng ; Frei, Michel ; Mahapatra, Souvik ; Alam, Muhammad A. (2010) On the nature of shunt leakage in amorphous silicon p-i-n solar cells IEEE Electron Device Letters, 31 (11). pp. 1266-1268. ISSN 0741-3106

Chen, Y. N. ; Pey, K. L. ; Goh, K. E. J. ; Lwin, Z. Z. ; Singh, P. K. ; Mahapatra, S. (2010) Tri-Level resistive switching in metal-nanocrystal-based Al₂O₃/SiO₂ gate stack IEEE Transactions on Electron Devices, 57 (11). pp. 3001-3005. ISSN 0018-9383

Singh, Pawan K. ; Bisht, Gaurav ; Auluck, Kshitij ; Sivatheja, M. ; Hofmann, Ralf ; Singh, Kaushal K. ; Mahapatra, Souvik (2010) Performance and reliability study of single-layer and dual-layer platinum nanocrystal flash memory devices under NAND operation IEEE Transactions on Electron Devices, 57 (8). pp. 1829-1837. ISSN 0018-9383

Sandhya, C. ; Oak, Apoorva B. ; Chattar, Nihit ; Ganguly, Udayan ; Olsen, C. ; Seutter, S. M. ; Date, L. ; Hung, R. ; Vasi, Juzer ; Mahapatra, Souvik (2010) Study of P/E cycling endurance induced degradation in SANOS memories under NAND (FN/FN) operation IEEE Transactions on Electron Devices, 57 (7). pp. 1548-1558. ISSN 0018-9383

Datta, A. ; Mahapatra, S. (2010) A comprehensive analysis on scaling prospects of dual-bit channel engineered SONOS NOR-flash EEPROM cells Solid State Electronics, 54 (4). pp. 397-404. ISSN 0038-1101

Singh, Pawan ; Sandhya, C. ; Auluck, Kshitij ; Bisht, Gaurav ; Sivatheja, M. ; Mukhopadhyay, Gautam ; Mahapatra, Souvik ; Hofmann, Ralf (2010) Applicability of dual layer metal nanocrystal flash memory for NAND 2 or 3-bit/cell operation: Understanding the anomalous breakdown and optimization of P/E conditions In: 2010 IEEE International Conference on Reliability Physics Symposium (IRPS), 2-6 May, 2010, Anaheim, CA, USA.

Lwin, Z. Z. ; Pey, K. L. ; Chen, Y. N. ; Singh, P. K. ; Mahapatra, S. (2010) Charging and discharging characteristics of metal nanocrystals in degraded dielectric stacks In: 2010 IEEE International Conference on Reliability Physics Symposium (IRPS), 2-6 May, 2010, Anaheim, CA, USA.

Deora, S. ; Maheta, V. D. ; Mahapatra, S. (2010) NBTI lifetime prediction in SiON p-MOSFETs by H/H₂ Reaction-Diffusion (RD) and dispersive hole trapping model In: 2010 IEEE International Conference on Reliability Physics Symposium (IRPS), 2-6 May, 2010, Anaheim, CA, USA.

Sandhya, C. ; Oak, Apoorva B. ; Chattar, Nihit ; Joshi, Ameya S. ; Ganguly, Udayan ; Olsen, C. ; Seutter, S. M. ; Date, L. ; Hung, R. ; Vasi, Juzer ; Mahapatra, Souvik (2009) Impact of SiN composition variation on SANOS memory performance and reliability under NAND (FN/FN) operation IEEE Transactions on Electron Devices, 56 (12). pp. 3123-3132. ISSN 0018-9383

Singh, Pawan K. ; Hofmann, Ralf ; Singh, Kaushal K. ; Krishna, Nety ; Mahapatra, Souvik (2009) Performance and reliability of Au and Pt single-layer metal nanocrystal flash memory under NAND (FN/FN) operation IEEE Transactions on Electron Devices, 56 (9). pp. 2065-2072. ISSN 0018-9383

Deora, S. ; Maheta, V. D. ; Islam, A. E. ; Alam, M. A. ; Mahapatra, S. (2009) A common framework of NBTI generation and recovery in Plasma-nitrided SiON p-MOSFETs IEEE Electron Device Letters, 30 (9). pp. 978-980. ISSN 0741-3106

Datta, Arnab ; Asnani, Rajesh ; Mahapatra, Souvik (2009) A novel gate-assisted reverse-read scheme to control bit coupling and read disturb for multibit/cell operation in deeply scaled split-gate SONOS flash EEPROM cells IEEE Electron Device Letters, 30 (8). pp. 885-887. ISSN 0741-3106

Sandhya, C. ; Ganguly, U. ; Chattar, N. ; Olsen, C. ; Seutter, S. M. ; Date, L. ; Hung, R. ; Vasi, J. M. ; Mahapatra, S. (2009) Effect of SiN on Performance and Reliability of Charge Trap Flash (CTF) under Fowler–Nordheim tunneling program/erase operation IEEE Electron Device Letters, 30 (2). pp. 171-173. ISSN 0741-3106

Mahapatra, Souvik ; Maheta, Vrajesh D. ; Islam, Ahmad Ehteshamul ; Alam, Muhammad Ashraful (2009) Isolation of NBTI stress generated interface trap and hole-trapping components in PNO p-MOSFETs IEEE Transactions on Electron Devices, 56 (2). pp. 236-242. ISSN 0018-9383

Deora, Shweta ; Maheta, Vrajesh Dineshchandra ; Bersuker, Gennadi ; Olsen, Christopher ; Ahmed, Khaled Z. ; Jammy, Raj ; Mahapatra, Souvik (2009) A comparative NBTI study of HfO₂, HfSiO_x and SiON p-MOSFETs using UF-OTF I_DLIN technique IEEE Electron Device Letters, 30 (2). pp. 152-154. ISSN 0741-3106

Singh, Pawan K. ; Bisht, Gaurav ; Hofmann, Ralf ; Singh, Kaushal ; Mahapatra, Souvik (2009) Dual layer Pt metal nanocrystal flash for multi-level-cell NAND applicationn In: 2009 IEEE International Memory Workshop, IMW '09, 10-14 May. 2009, Monterey, CA, USA.

Islam, A. E. ; Mahapatra, S. ; Deora, S. ; Maheta, V. D. ; Alam, M. A. (2009) On the differences between ultra-fast NBTI measurements and Reaction-Diffusion theory In: 2009 IEEE International Conference on Electron Devices Meeting (IEDM), 7-9 Dec. 2009, Baltimore, MD, USA.

Singh, Pawan K ; Bisht, Gaurav ; Sivatheja, M. ; Sandhya, C. ; Mukhopadhyay, Gautam ; Mahapatra, Souvik ; Hofmann, Ralf ; Singh, Kaushal ; Krishna, Nety (2009) Reliability of single and dual Layer Pt nanocrystal devices for NAND flash applications: A 2-region model for endurance defect generation In: 2009 IEEE International Reliability Physics Symposium, 26-30 April, 2009, Montreal, QC, Canada.

Singh, Pawan K. ; Bisht, Gaurav ; Hofmann, Ralf ; Singh, Kaushal ; Krishna, Nety ; Mahapatra, Souvik (2008) Metal nanocrystal memory with pt single- and dual-layer NC with low-leakage Al₂O₃ blocking dielectric IEEE Electron Device Letters, 29 (12). pp. 1389-1391. ISSN 0741-3106

Maheta, Vrajesh D. ; Naresh Kumar, E. ; Purawat, Shweta ; Olsen, Christopher ; Ahmed, Khaled ; Mahapatra, Souvik (2008) Development of an ultrafast on-the-fly I_DLIN technique to study NBTI in plasma and thermal oxynitride p-MOSFETs IEEE Transactions on Electron Devices, 55 (10). pp. 2614-2622. ISSN 0018-9383

Maheta, Vrajesh D. ; Olsen, Christopher ; Ahmed, Khaled ; Mahapatra, Souvik (2008) The impact of nitrogen engineering in silicon oxynitride gate dielectric on Negative-bias Temperature Instability of p-MOSFETs: A study by ultrafast on-the-fly I_DLIN technique IEEE Transactions on Electron Devices, 55 (7). pp. 1630-1638. ISSN 0018-9383

Islam, Ahmad Ehteshamul ; Gupta, Gaurav ; Ahmed, Khaled Z. ; Mahapatra, Souvik ; Alam, Muhammad Ashraful (2008) Optimization of gate leakage and NBTI for plasma-nitrided gate oxides by numerical and analytical models IEEE Transactions on Electron Devices, 55 (5). pp. 1143-1152. ISSN 0018-9383

Mahapatra, Souvik ; Alam, Muhammad Ashraful (2008) Defect generation in p-MOSFETs under Negative-Bias Stress: an experimental perspective IEEE Transactions on Device and Materials Reliability, 8 (1). pp. 35-46. ISSN 1530-4388

Singh, Pawan K. ; Singh, Kaushal K. ; Hofmann, Ralf ; Armstrong, Karl ; Krishna, Nety ; Mahapatra, Souvik (2008) Au nanocrystal flash memory reliability and failure analysis In: 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2008, 7-11 July, 2008, Singapore, Singapore.

Mahapatra, S. ; Maheta, V. D. (2008) Gate insulator process dependent NBTI in SiON p-MOSFETs In: 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008, 20-23 Oct, 2008, Beijing, China.

Sandhya, C. ; Ganguly, U. ; Singh, K. K. ; Singh, P. K. ; Olsen, C. ; Seutter, S. M. ; Hung, R. ; Conti, G. ; Ahmed, K. ; Krishna, N. ; Vasi, J. ; Mahapatra, S. (2008) Nitride engineering and the effect of interfaces on Charge Trap Flash performance and reliability In: 2008 IEEE International Reliability Physics Symposium, IRPS 2008, 27 April-1 May, 2008, Phoenix, AZ, USA.

Kapila, G. ; Goyal, N. ; Maheta, V. D. ; Olsen, C. ; Ahmed, K. ; Mahapatra, S. (2008) A comprehensive study of flicker noise in plasma nitrided SiON p-MOSFETs: process dependence of pre-existing and NBTI stress generated trap distribution profiles In: 2008 IEEE International Conference on Electron Devices Meeting (IEDM), 15-17 Dec, 2008, San Francisco, CA, USA.

Sandhya, C. ; Ganguly, U. ; Singh, K. K. ; Olsen, C. ; Seutter, S. M. ; Conti, G. ; Ahmed, K. ; Krishna, N. ; Vasi, J. ; Mahapatra, S. (2008) The effect of band gap engineering of the nitride storage node on performance and reliability of charge trap flash In: 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2008, 7-11 July, 2008, Singapore, Singapore.

Deora, Shweta ; Mahapatra, Souvik (2008) A study of NBTI in HfSiON/TiN p-MOSFETs using ultra-fast on-the-fly (UF-OTF) IDLIN technique In: 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 7-11 July, 2008, Singapore, Singapore.

Islam, Ahmad Ehteshamul ; Kufluoglu, Haldun ; Varghese, Dhanoop ; Mahapatra, Souvik ; Alam, Muhammad Ashraful (2007) Recent issues in Negative-bias Temperature Instability: initial degradation, field dependence of interface trap generation, hole trapping effects, and relaxation IEEE Transactions on Electron Devices, 54 (9). pp. 2143-2154. ISSN 0018-9383

Varghese, Dhanoop ; Gupta, Gaurav ; Lakkimsetti, Leela Madhav ; Saha, Dipankar ; Ahmed, Khaled ; Nouri, Faran ; Mahapatra, Souvik (2007) Physical mechanism and gate insulator material dependence of generation and recovery of Negative-bias Temperature Instability in p-MOSFETs IEEE Transactions on Electron Devices, 54 (7). pp. 1672-1680. ISSN 0018-9383

Alam, M. A. ; Kufluoglu, H. ; Varghese, D. ; Mahapatra, S. (2007) A comprehensive model for PMOS NBTI degradation: Recent progress Microelectronics Reliability, 47 (6). pp. 853-862. ISSN 0026-2714

Datta, A. ; Bharath Kumar, P. ; Mahapatra, S. (2007) Dual-bit/cell SONOS flash EEPROMs: Impact of channel engineering on programming speed and bit coupling effect IEEE Electron Device Letters, 28 (5). pp. 446-448. ISSN 0741-3106

Bharath Kumar, P. ; Sharma, Ravinder ; Nair, Pradeep R. ; Mahapatra, Souvik (2007) Investigation of drain disturb in SONOS flash EEPROMs IEEE Transactions on Electron Devices, 54 (1). pp. 98-105. ISSN 0018-9383

Nainani, A. ; Palit, S. ; Singh, P. K. ; Ganguly, U. ; Krishna, N. ; Vasi, J. ; Mahapatra, S. (2007) Development of A 3D simulator for metal Nanocrystal (NC) flash memories under NAND operation In: 2007 IEEE International Electron Devices Meeting, IEDM 2007, 10-12 Dec, 2007, Washington, DC, USA.

Kumar, E. N. ; Maheta, V. D. ; Purawat, S. ; Islam, A. E. ; Olsen, C. ; Ahmed, K. ; Alam, M. A. ; Mahapatra, S. (2007) Material dependence of NBTI physical mechanism in Silicon Oxynitride (SiON) p-MOSFETs: A comprehensive study by Ultra-fast On-the-fly (UF-OTF) I_DLIN technique In: 2007 IEEE International Electron Devices Meeting, IEDM.

Mahapatra, S. ; Ahmed, K. ; Varghese, D. ; Islam, A. E. ; Gupta, G. ; Madhav, L. ; Saha, D. ; Alam, M. A. (2007) On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: Can differences in insulator processing conditions resolve the interface trap generation versus hole trapping controversy? In: 2007 45th Annual IEEE International Reliability Physics Symposium, 15-19 April, 2007, Phoenix, AZ, USA.

Islam, A. E. ; Kumar, E. N. ; Das, H. ; Purawat, S. ; Maheta, V. ; Aono, H. ; Murakami, E. ; Mahapatra, S. ; Alam, M. A. (2007) Theory and practice of on-the-fly and ultra-fast V_T measurements for NBTI degradation: Challenges and opportunities In: 2007 IEEE International Electron Devices Meeting, IEDM, 10-12 Dec, 2007, Washington, DC, USA.

Mahapatra, S. ; Saha, D. ; Varghese, D. ; Kumar, P. B. (2006) On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN and HCI stress IEEE Transactions on Electron Devices, 53 (7). pp. 1583-1592. ISSN 0018-9383

Saha, D. ; Varghese, D. ; Mahapatra, S. (2006) Role of anode hole injection and valence band hole tunneling on interface trap generation during Hot Carrier Injection stress IEEE Electron Device Letters, 27 (7). pp. 585-587. ISSN 0741-3106

Kumar, P. B. ; Nair, P. R. ; Sharma, R. ; Kamohara, S. ; Mahapatra, S. (2006) Lateral profiling of trapped charge in SONOS flash EEPROMs programmed using CHE injection IEEE Transactions on Electron Devices, 53 (4). pp. 698-705. ISSN 0018-9383

Saha, D. ; Varghese, D. ; Mahapatra, S. (2006) On the generation and recovery of hot carrier induced interface traps: A critical examination of the 2-D R-D model IEEE Electron Device Letters, 27 (3). pp. 188-190. ISSN 0741-3106

Kumar, P. B. ; Nair, D. R. ; Mahapatra, S. (2006) Using Soft Secondary Electron Programming to reduce drain disturb in floating-gate NOR flash EEPROMs IEEE Transactions on Device and Materials Reliability, 6 (1). pp. 81-86. ISSN 1530-4388

Paul, Abhijeet ; Sridhar, Ch. ; Gedam, Suny ; Mahapatra, S. (2006) Comprehensive simulation of program, erase and retention in charge trapping flash memories In: 2006 International Electron Devices Meeting, IEDM '06, 11-13 Dec, 2006, San Francisco, CA, USA.

Bharath Kumar, P. ; Murakami, E. ; Kamohara, S. ; Mahapatra, S. (2006) Endurance and retention characteristics of SONOS EEPROMs operated using BTBT induced hot hole erase In: 2006 44th Annual IEEE International Reliability Physics Symposium Proceedings, 26-30 March, 2006, San Jose, CA, USA.

Islam, A. E. ; Gupta, G. ; Mahapatra, S. ; Krishnan, A. T. ; Ahmed, K. ; Nouri, F. ; Oates, A. ; Alam, M. A. (2006) Gate leakage vs. NBTI in plasma nitrided oxides: characterization, physical principles and optimization In: 2006 International Electron Devices Meeting, IEDM '06, 11-13 Dec, 2006, San Francisco, CA, USA.

Varghese, D. ; Mahapatra, S. ; Alam, M. A. (2005) Hole energy dependent interface trap generation in MOSFET Si/SiO₂ interface IEEE Electron Device Letters, 26 (8). pp. 572-574. ISSN 0741-3106

Mahapatra, S. ; Alam, M. A. ; Kumar, P. Bharath ; Dalei, T. R. ; Varghese, D. ; Saha, D. (2005) Negative Bias Temperature Instability in CMOS devices Microelectronic Engineering, 80 . pp. 114-121. ISSN 0167-9317

Nair, D. R. ; Mahapatra, S. ; Shukuri, S. ; Bude, J. D. (2005) Explanation of P/E cycling impact on drain disturb in flash EEPROMs under CHE and CHISEL programming operation IEEE Transactions on Electron Devices, 52 (4). pp. 534-540. ISSN 0018-9383

Sridhar, K. ; Bharath Kumar, P. ; Mahapatra, S. ; Murakami, E. ; Kamohara, S. (2005) Controlling injected electron and hole profiles for better reliability of split gate SONOS In: 2005 Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2005, 27 June-1 July, 2005, Singapore, Singapore.

Kurnars, P. B. ; Dalei, T. R. ; Varghese, D. ; Saba, D. ; Mahapatra, S. ; Alam, M. A. (2005) Impact of substrate bias on p-MOSFET negative bias temperature instability In: Proceedings of 2005 43rd Annual IEEE International Reliability Physics Symposium., 17-21 April, 2005, San Jose, CA, USA.

Kumar, P. B. ; Sharma, R. ; Nair, P. R. ; Nair, D. R. ; Kamohara, S. ; Mahapatra, S. ; Vasi, J. (2005) Mechanism of drain disturb in SONOS flash EEPROMs In: 2005 43rd Annual IEEE International Reliability Physics Symposium. Proceedings, 17-21 April, 2005, San Jose, CA, USA.

Varghese, D. ; Saha, D. ; Mahapatra, S. ; Ahmed, K. ; Nouri, F. ; Alam, M. (2005) On the dispersive versus arrhenius temperature activation of nbti time evolution in plasma nitrided gate oxides: measurements, theory and implications In: 2005 IEEE International Electron Devices Meeting, IEDM Technical Digest, 5-5 Dec, 2005, Washington, DC, USA.

Nair, D. R. ; Shukuri, S. ; Mahapatra, S. (2004) Cycling endurance of NOR flash EEPROM cells under CHISEL programming operation—impact of technological parameters and scaling IEEE Transactions on Electron Devices, 51 (10). pp. 1672-1678. ISSN 0018-9383

Mahapatra, S. ; BharathKumar, P. ; Alam, M .A. (2004) Investigation and modeling of interface and bulk trap generation during Negative Bias Temperature Instability of p-MOSFETs IEEE Transactions on Electron Devices, 51 (9). pp. 1371-1379. ISSN 0018-9383

Nair, D. R. ; Mahapatra, S. ; Shukuri, S. ; Bude, J. D. (2004) Drain disturb during CHISEL programming of NOR flash EEPROMs-physical mechanisms and impact of technological parameters IEEE Transactions on Electron Devices, 51 (5). pp. 701-707. ISSN 0018-9383

Nair, D. R. ; Mohapatra, N. R. ; Mahapatra, S. ; Shukuri, S. ; Bude, J. D. (2004) Effect of P/E cycling on drain disturb in flash EEPROMs under CHE and CHISEL operation IEEE Transactions on Device and Materials Reliability, 4 (1). pp. 32-37. ISSN 1530-4388

Mahapatra, S. ; Alam, M. A. ; Bharath Kumar, P. ; Dalei, T. R. ; Saha, D. (2004) Mechanism of negative bias temperature instability in CMOS devices degradation, recovery and impact of nitrogen In: 2004 IEEE International Electron Devices Meeting, IEDM Technical Digest, 13-15 Dec, 2004, San Francisco, CA, USA.

Nair, D. R. ; Mahapatra, S. ; Shukuri, S. ; Bude, J. (2004) Multi-level programming of NOR flash EEPROMs by CHISEL mechanism In: 2004 42nd Annual IEEE International Reliability Physics Symposium Proceedings, 25-29 April, 2004, Phoenix, AZ, USA.

Nair, P. R. ; Kumar, B. ; Sharma, R. ; Mahapatra, S. ; Kamohara, S. (2004) A comprehensive trapped charge profiling technique for SONOS flash EEPROMs In: 2004 IEEE International Electron Devices Meeting, IEDM Technical Digest, 13-15 Dec, 2004, San Francisco, CA, USA.

Anil, K G. ; Mahapatra, S. ; Eisele, I. (2003) A detailed experimental investigation of impact ionization in n-channel metal–oxide–semiconductor field-effect-transistors at very low drain voltages Solid State Electronics, 47 (6). pp. 995-1001. ISSN 0038-1101

Mohapatra, N. R. ; Mahapatra, S. ; Rao, V. R. ; Shukuri, S. ; Bude, J. (2003) Effect of programming biases on the reliability of CHE and CHISEL flash EEPROMs In: 41st Annual 2003 IEEE International Reliability Physics Symposium Proceedings, 30 March-4 April, 2003, Dallas, TX, USA.

Nair, D. R. ; Mohapatra, N .R. ; Mahapatra, S. ; Shukuri, S. ; Bude, J. (2003) The effect of CHE and CHISEL programming operation on drain disturb in flash EEPROMs In: Proceedings of the 2003 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2003, 11-11 July, 2003, Singapore, Singapore.

Mohapatra, N. R. ; Nair, D. R. ; Mahapatra, S. ; Rao, V. R. ; Shukuri, S. (2003) The impact of channel engineering on the performance reliability and scaling of CHISEL NOR flash EEPROMs In: 2003 33rd Conference on European Solid-State Device Research, ESSDERC '03, 16-18 Sept, 2003, Estoril, Portugal.

Mahapatra, S. ; Kumar, P. B. ; Alam, M. A. (2003) A new observation of enhanced Bias Temperature Instability in thin gate oxide p-MOSFETs In: 2003 IEEE International Electron Devices Meeting, IEDM '03 Technical Digest, 8-10 Dec, 2003, Washington, DC, USA.

Mahapatra, S. ; Shukuri, S. ; Bude, J. (2002) CHISEL flash EEPROM. I. Performance and scaling IEEE Transactions on Electron Devices, 49 (7). pp. 1296-1301. ISSN 0018-9383

Mahapatra, S. ; Shukuri, S. ; Bude, J. (2002) CHISEL flash EEPROM. II. Reliability IEEE Transactions on Electron Devices, 49 (7). pp. 1302-1307. ISSN 0018-9383

Anil, K. G. ; Mahapatra, S. ; Eisele, I. (2002) Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of n-channel silicon MOSFETs IEEE Transactions on Electron Devices, 49 (7). pp. 1283-1288. ISSN 0018-9383

Mahapatra, S. ; Alam, M. A. (2002) A predictive reliability model for PMOS bias temperature degradation In: 2002 International Electron Devices Meeting, IEDM '02, 8-11 Dec, 2002, San Francisco, CA, USA.

Anil, K. G. ; Mahapatra, S. ; Eisele, I. (2001) Experimental verification of the nature of the high energy tail in the electron energy distribution in n-channel MOSFETs IEEE Electron Device Letters, 22 (10). pp. 478-480. ISSN 0741-3106

Anil, K. G. ; Mahapatra, S. ; Eisele, I. (2000) Role of inversion layer quantization on sub-bandgap impact ionization in deep-sub-micron n-channel MOSFETs In: 2000 Technical Digest International Electron Devices Meeting, IEDM '00, 10-13 Dec, 2000, San Francisco, CA, USA.

Mahapatra, S. ; Parikh, C. D. ; Vasi, J. (1999) A new "multifrequency" charge pumping technique to profile hot-carrier-induced interface-state density in nMOSFET's IEEE Transactions on Electron Devices, 46 (5). pp. 960-967. ISSN 0018-9383