Items where Author is "Wittmann, F."Group by: Item Type | No Grouping Number of items: 1. Rao, V. R. ; Wittmann, F. ; Gossner, H. ; Eisele, I. (1996) Hysteresis behavior in 85-nm channel length vertical n-MOSFETs grown by MBE IEEE Transactions on Electron Devices, 43 (6). pp. 973-976. ISSN 0018-9383 |
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