Items where Author is "Shrivastava, M."

Article

Shrivastava, M. ; Mehta, R. ; Gupta, S. ; Agarwal, N. ; Baghini, M. S. ; Sharma, D. K. ; Schulz, T. ; Armin, K. ; Molzer, W. ; Gossner, H. ; Rao, V. R. (2011) Toward system on chip (SoC) development using FinFET technology: challenges, solutions, process co-development & optimization guidelines IEEE Transactions on Electron Devices, 58 (6). pp. 1597-1607. ISSN 0018-9383

Asra, R. ; Shrivastava, M. ; Murali, K. V. R. M. ; Pandey, R. K. ; Gossner, H. ; Rao, V. R. (2011) Tunnel FET for VDD scaling below 0.6V with CMOS comparable performance IEEE Transactions on Electron Devices, 58 (7). pp. 1855-1863. ISSN 0018-9383

Shrivastava, M. ; Agrawal, M. ; Aghassi, J. ; Gossner, H. ; Molzer, W. ; Schulz, T. ; Ramgopal Rao, V. (2011) On the thermal failure in nanoscale devices: insight towards heat transport including critical BEOL and design guidelines for robust thermal management & EOS/ESD reliability 2011 IEEE International Reliability Physics Symposium (IRPS) . pp. 3F.3_1-3F.3_5. ISSN 1541-7026

Shrivastava, M. ; Gossner, H. ; Baghini, M. S. ; Rao, V. R. (2010) 3D TCAD base d approach for the evaluation of nanoscale devices during ESD failure 7th International SoC Design Conference (ISOCC 2010) . pp. 268-271.

Shrivastava, M. ; Gossner, H. ; Baghini, M. S. ; Rao, V. R. (2010) On the Transient behavior of various drain extended MOS devices under the ESD stress condition 7th International SoC Design Conference (ISOCC 2010) . pp. 264-267.

Shrivastava, M. ; Gossner, H. ; Baghini, M. S. ; Rao, V. R. (2010) Part I: On the behavior of STI-type DeNMOS device under ESD conditions IEEE Transactions on Electron Devices, 57 (9). pp. 2235-2242. ISSN 0018-9383

Shrivastava, M. ; Gossner, H. ; Baghini, M. S. ; Rao, V. R. (2010) Part II: On the three-dimensional filamentation and failure modeling of STI type DeNMOS device under various ESD conditions IEEE Transactions on Electron Devices, 57 (9). pp. 2243-2250. ISSN 0018-9383

Shrivastava, M. ; Baghini, M. S. ; Sharma, D. K. ; Rao, V. R. (2010) A novel bottom spacer FinFET structure for improved short-channel, power-delay, and thermal performance IEEE Transactions on Electron Devices, 57 (6). pp. 1287-1294. ISSN 0018-9383

Shrivastava, M. ; Schneider, J. ; Baghini, M. S. ; Gossner, H. ; Rao, V. R. (2010) On the failure mechanism and current instabilities in RESURF type DeNMOS device under ESD conditions Proceedings of the 2010 IEEE International Reliability Physics Symposium (IRPS) . pp. 841-845. ISSN 1541-7026

Shrivastava, M. ; Bychikhin, S. ; Pogany, D. ; Schneider, J. ; Shojaei Baghini, M. ; Gossner, H. ; Gornik, E. ; Ramgopal Rao, V. (2010) On the differences between 3D filamentation and failure of N & P type drain extended MOS devices under ESD condition IEEE International Reliability Physics Symposium (IRPS), 2010 . pp. 480-484. ISSN 1541-7026

Shrivastava, M. ; Baghini, M. S. ; Gossner, H. ; Rao, V. R. (2010) Part I. Mixed-signal performance of various high-voltage drain-extended MOS devices IEEE Transactions on Electron Devices, 57 (2). pp. 448-457. ISSN 0018-9383

Shrivastava, M. ; Baghini, M. S. ; Gossner, H. ; Rao, V. R. (2010) Part I: Mixed-signal performance of various high-voltage drain-extended MOS devices IEEE Transactions on Electron Devices, 57 (2). pp. 448-457. ISSN 0018-9383

Shrivastava, M. ; Baghini, M. S. ; Gossner, H. ; Rao, V. R. (2010) Part II. A novel scheme to optimize the mixed-signal performance and hot-carrier reliability of drain-extended MOS devices IEEE Transactions on Electron Devices, 57 (2). pp. 458-465. ISSN 0018-9383

Shrivastava, M. ; Baghini, M. S. ; Gossner, H. ; Rao, V. R. (2010) Part II: A novel scheme to optimize the mixed-signal performance and hot-carrier reliability of drain-extended MOS devices IEEE Transactions on Electron Devices, 57 (2). pp. 458-465. ISSN 0018-9383

Shrivastava, M. ; Verma, B. ; Baghini, M. S. ; Russ, C. ; Sharma, D. K. ; Gossner, H. ; Rao, V. R. (2009) Benchmarking the device performance at sub 22 nm node technologies using an SoC framework Proceedings of the International Electron Devices Meeting (IEDM) . pp. 1-4.

Shrivastava, M. ; Bychikhin, S. ; Pogany, D. ; Schneider, J. ; Baghini, M. S. ; Gossner, H. ; Gornik, E. ; Rao, V. R. (2009) Filament study of STI type drain extended NMOS device using transient interferometric mapping Proceedings of the International Electron Devices Meeting (IEDM) . pp. 1-4.

Shrivastava, M. ; Schneider, J. ; Jain, R. ; Baghini, M. S. ; Gossner, H. ; Ramgopal Rao, V. (2009) IGBT plugged in SCR device for ESD protection in advanced CMOS technology 31st IEEE Annual InternationaEOS/ESD Symposium, Anaheim, CA, USA . pp. 1-9.

Shrivastava, M. ; Schneider, J. ; Baghini, M. S. ; Gossner, H. ; Rao, V. R. (2009) Highly resistive body STI NDeMOS: an optimized DeMOS device to achieve moving current filaments for robust ESD protection Proceedings of the 2009 IEEE International Reliability Physics Symposium (IRPS) . pp. 754-759. ISSN 1541-7026

Shrivastava, M. ; Schneider, J. ; Baghini, M. S. ; Gossner, H. ; Rao, V. R. (2009) A new physical insight and 3D device modeling of STI type denmos device failure under ESD conditions Proceedings of the 2009 IEEE International Reliability Physics Symposium (IRPS) . pp. 669-675. ISSN 1541-7026

Shrivastava, M. ; Baghini, M. S. ; Sachid, A. B. ; Sharma, D. K. ; Rao, V. R. (2008) A novel and robust approach for common mode feedback using IDDG FinFET IEEE Transactions on Electron Devices, 55 (11). pp. 3274-3282. ISSN 0018-9383

Venkataraman, C. ; Habib, G. ; Kadamba, D. ; Shrivastava, M. ; Leon, J.-F. ; Crouzille, B. ; Boucher, O. ; Streets, D. G. (2006) Emissions from open biomass burning in India: Integrating the inventory approach with high-resolution Moderate Resolution Imaging Spectroradiometer (MODIS) active-fire and land cover data Global Biogeochemical Cycles, 20 (2). No pp. given. ISSN 088-66236