Items where Author is "Sharma, D. K. "

Gilda, N. A. ; Nag, S. ; Patil, S. ; Baghini, M. S. ; Sharma, D. K. ; Rao, V. R. (2011) Current excitation method for ΔR measurement in piezo-resistive sensors with a 0.3-ppm resolution Transactions on Instrumentation and Measurement, PP (99). pp. 1-8. ISSN 0018-9456

Gilda, Neena A. ; Patil, Sheetal ; Seena, V. ; Joshi, Sanjay ; Thaker, Viral ; Thakur, Sanket ; Anvesha, A. ; Shojaei Baghini, M. ; Sharma, D. K. ; Ramgopal Rao, V. (2011) Piezoresistive 6-MNA coated microcantilevers with signal conditioning circuits for electronic nose Proceedings of the IEEE Asian Solid-State Circuits Conference (A-SSCC) 2011, Jeju, Korea . pp. 121-124.

Shrivastava, M. ; Mehta, R. ; Gupta, S. ; Agarwal, N. ; Baghini, M. S. ; Sharma, D. K. ; Schulz, T. ; Armin, K. ; Molzer, W. ; Gossner, H. ; Rao, V. R. (2011) Toward system on chip (SoC) development using FinFET technology: challenges, solutions, process co-development & optimization guidelines IEEE Transactions on Electron Devices, 58 (6). pp. 1597-1607. ISSN 0018-9383

Sachid, A. B. ; Baghini, M. S. ; Sharma, D. K. ; Rao, V. R. (2010) Alternate scaling strategies for Multi-Gate FETs for high-performance and low-power applications 7th International SoC Design Conference (ISOCC 2010) . pp. 256-259.

Shrivastava, M. ; Baghini, M. S. ; Sharma, D. K. ; Rao, V. R. (2010) A novel bottom spacer FinFET structure for improved short-channel, power-delay, and thermal performance IEEE Transactions on Electron Devices, 57 (6). pp. 1287-1294. ISSN 0018-9383

Sachid, A. B. ; Thakker, R. A. ; Sathe, C. ; Baghini, M. S. ; Sharma, D. K. ; Ramgopal Rao, V. ; Patil, M. B. (2010) Auto-BET-AMS: an automated device and circuit optimization platform to benchmark emerging technologies for performance and variability using an analog and mixed-signal design framework Proceedings of the 11th International Symposium on Quality Electronic Design (ISQED 2010) . pp. 713-720. ISSN 1948-3287

Shrivastava, M. ; Verma, B. ; Baghini, M. S. ; Russ, C. ; Sharma, D. K. ; Gossner, H. ; Rao, V. R. (2009) Benchmarking the device performance at sub 22 nm node technologies using an SoC framework Proceedings of the International Electron Devices Meeting (IEDM) . pp. 1-4.

Nag, Sudip ; Kale, N. S. ; Rao, V. R. ; Sharma, D. K. (2009) An ultra-sensitive ΔR/R measurement system for biochemical sensors using piezoresistive micro-cantilevers 31st Annual International Conference of theIEEE Engineering in Medicine and Biology Society (EMBC'09) . pp. 3794-3797. ISSN 1557-170X

Sachid, A. B. ; Kulkarni, G. S. ; Baghini, M. S. ; Sharma, D. K. ; Rao, V. R. (2009) Highly robust nanoscale planar double-gate MOSFET device and SRAM cell immune to gate-misalignment and process variations Proceedings of the IEEE International Workshop on Electron Devices & Semiconductor Technology, Mumbai, India . pp. 1-4.

Sachid, A. B. ; Francis, R. ; Baghini, M. S. ; Sharma, D. K. ; Bach, K. -H. ; Mahnkopf, R. ; Rao, V. R. (2008) Sub-20 nm gate length FinFET design: can high-k spacers make a difference? Proceedings of the International Electron Devices Meeting (IEDM) . pp. 1-4.

Shrivastava, M. ; Baghini, M. S. ; Sachid, A. B. ; Sharma, D. K. ; Rao, V. R. (2008) A novel and robust approach for common mode feedback using IDDG FinFET IEEE Transactions on Electron Devices, 55 (11). pp. 3274-3282. ISSN 0018-9383

Sachid, A. B. ; Manoj, C. R. ; Sharma, D. K. ; Rao, V. R. (2008) Gate fringe-induced barrier lowering in underlap FinFET structures and its optimization IEEE Electron Device Letters, 29 (1). pp. 128-130. ISSN 0741-3106

Jha, N. ; Reddy, P. S. ; Sharma, D. K. ; Rao, V. R. (2005) NBTI degradation and its impact for analog circuit reliability IEEE Transactions on Electron Devices, 52 (12). pp. 2609-2615. ISSN 0018-9383

Reddy, M. V. R. ; Sharma, D. K. ; Patil, M. B. ; Rao, V. R. (2005) Power-area evaluation of various double-gate RF mixer topologies IEEE Electron Device Letters, 26 (9). pp. 664-666. ISSN 0741-3106

Kumar, D. V. ; Narasimhalu, K. ; Reddy, P. S. ; Shojaei-Baghini, M. ; Sharma, D. K. ; Patil, M. B. ; Rao, V. R. (2005) Evaluation of the impact of layout on device and analog circuit performance with lateral asymmetric channel MOSFETs IEEE Transactions on Electron Devices, 52 (7). pp. 1603-1609. ISSN 0018-9383

Betty, C. A. ; Lal, R. ; Sharma, D. K. ; Yakhmi, J. V. ; Mittal, J. P. (2004) Macroporous silicon based capacitive affinity sensor-fabrication and electrochemical studies Sensors and Actuators B: Chemical, 97 (2-3). pp. 334-343. ISSN 0925-4005

Narasimhulu, K. ; Sharma, D. K. ; Rao, V. R. (2003) Impact of lateral asymmetric channel doping on deep submicrometer mixed-signal device and circuit performance IEEE Transactions on Electron Devices, 50 (12). pp. 2481-2489. ISSN 0018-9383

Poornima, P. ; Tripathy, S. K. ; Ramgopal Rao, V. ; Sharma, D. K. (2002) Resolution enhancement techniques for optical lithography Proceedings of the 11th International Workshop on The Physics of Semiconductor Devices, Delhi, India, 4746 (2). pp. 1260-1262.

Ramgopal Rao, V. ; Hansch, W. ; Mahapatra, S. ; Sharma, D. K. ; Vasi, J. ; Grabolla, T. ; Eisele, I. (1999) Low temperature-high pressure grown thin gate dielectrics for MOS applications Microelectronic Engineering, 48 (1-4). pp. 223-226. ISSN 0167-9317

Ramgopal Rao, V. ; Hansch, W. ; Baumgartner, H. ; Eisele, I. ; Sharma, D. K. ; Vasi, J. ; Grabolla, T. (1997) Charge trapping behaviour in deposited and grown thin metal-oxide-semiconductor gate dielectrics Thin Solid Films, 296 (1-2). pp. 37-40. ISSN 0040-6090

Ramgopal Rao, V. ; Eisele, I. ; Patrikar, R. M. ; Sharma, D. K. ; Vasi, J. ; Grabolla, T. (1997) High-field stressing of LPCVD gate oxides IEEE Electron Device Letters, 18 (3). pp. 84-86. ISSN 0741-3106

Ramgopal Rao, V. ; Sharma, D. K. ; Vasi, J. (1996) Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectrics IEEE Transactions on Electron Devices, 43 (9). pp. 1467-1470. ISSN 0018-9383

Sharma, D. K. ; Narasimhan, K. L. ; Periasamy, N. ; Bapat, D. R. (1991) Temperature dependence of the electron drift mobility in doped and undoped amorphous silicon Physical Review B: Condensed Matter and Materials Physics, 44 (23). pp. 12806-12808. ISSN 1098-0121

Sharma, D. K. ; Ramanathan, K. V. (1983) Modeling thermal effects on MOS I-V characteristics IEEE Electron Device Letters, 4 (10). pp. 362-364. ISSN 0741-3106