Items where Author is "Ruzmetov, Dmitry"

Article

Ruzmetov, Dmitry ; Gopalakrishnan, Gokul ; Ko, Changhyun ; Narayanamurti, Venkatesh ; Ramanathan, Shriram (2010) Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer Journal of Applied Physics, 107 (11). pp. 114516_1-114516_8. ISSN 0021-8979

Ruzmetov, Dmitry ; Heiman, Don ; Claflin, Bruce B. ; Narayanamurti, Venkatesh ; Ramanathan, Shriram (2009) Hall carrier density and magnetoresistance measurements in thin-film vanadium dioxide across the metal-insulator transition Physical Review B, 79 (15). pp. 153107_1-153107_4. ISSN 1098-0121

Ruzmetov, Dmitry ; Gopalakrishnan, Gokul ; Deng, Jiangdong ; Narayanamurti, Venkatesh ; Ramanathan, Shriram (2009) Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions Journal of Applied Physics, 106 (8). pp. 083702_1-083702_5. ISSN 0021-8979

Ruzmetov, Dmitry ; Zawilski, Kevin T. ; Senanayake, Sanjaya D. ; Narayanamurti, Venkatesh ; Ramanathan, Shriram (2008) Infrared reflectance and photoemission spectroscopy studies across the phase transition boundary in thin film vanadium dioxide Journal of Physics: Condensed Matter, 20 (46). pp. 465204_1-465204_5. ISSN 0953-8984

Ruzmetov, Dmitry ; Senanayake, Sanjaya D. ; Narayanamurti, Venkatesh ; Ramanathan, Shriram (2008) Correlation between metal-insulator transition characteristics and electronic structure changes in vanadium oxide thin films Physical Review B, 77 (19). pp. 195442_1-195442_5. ISSN 1098-0121

Ruzmetov, Dmitry ; Zawilski, Kevin T. ; Narayanamurti, Venkatesh ; Ramanathan, Shriram (2007) Structure-functional property relationships in rf-sputtered vanadium dioxide thin films Journal of Applied Physics, 102 (11). pp. 113715_1-113715_7. ISSN 0021-8979