Items where Author is "Ray, Swati"Group by: Item Type | No Grouping Jump to: Article Number of items: 24. ArticleRay, Swati ; Das, Rajesh ; Barua, A. K. (2002) Performance of double junction a-Si solar cells by using ZnO: Al films with different electrical and optical properties at the n/metal interface Solar Energy Materials and Solar Cells, 74 (1-4). pp. 387-392. ISSN 0927-0248 Bose, Subhasis ; Ray, Swati ; Barua, A. K. (1996) Textured aluminium-doped ZnO thin films prepared by magnetron sputtering Journal of Physics D: Applied Physics, 29 (7). pp. 1873-1877. ISSN 0022-3727 Ray, Swati ; Ghosh, Sukriti ; De, Abhijit ; Barua, A. K. (1994) Improved quality a-SiC:H films prepared by photo chemical vapour decomposition of silane and acetylene Solar Energy Materials and Solar Cells, 33 (4). pp. 517-531. ISSN 0927-0248 Acharya, P. K. ; Banerjee, H. D. ; Chopra, K. L. ; Saha, S. C. ; Ray, Swati (1994) Effect of hydrogen dilution in silane on light induced degradation of hydrogenated amorphous silicon films for solar photovoltaic applications Solar Energy Materials & Solar Cells, 32 (1). pp. 21-28. ISSN 0927-0248 Saha, S. C. ; Barua, A. K. ; Ray, Swati (1993) The role of hydrogen dilution and radio frequency power in the formation of microcrystallinity of n-type Si:H thin film Journal of Applied Physics, 74 (9). p. 5561. ISSN 0021-8979 Ray, Swati ; Dutta, Joydeep ; Barua, A. K. ; Deb, S. K. (1991) Bilayer SnO2:In/SnO2 thin films as transparent electrodes of amorphous silicon solar cells Thin Solid Films, 199 (2). pp. 201-207. ISSN 0040-6090 Das, Debajyoti ; De, S. C. ; Ray, Swati ; Barua, A. K. (1991) Characterization of a-SiGe: H films prepared by rf glow discharge Journal of Non-Crystalline Solids, 128 (2). pp. 172-182. ISSN 0022-3093 De, Abhijit ; Ganguly, Gautam ; Ray, Swati ; Barua, A. K. (1990) Influence of chamber pressure on hydrogen bonding configurations in a-SiGe: H films prepared by photo-CVD Japanese Journal of Applied Physics, 29 (11). pp. 2365-2370. ISSN 0021-4922 Das, Debajyoti ; De, S. C ; Ray, Swati ; Batabyal, A. K. ; Barua, A. K. (1989) Device quality a-SiGe:H films for multijunction solar cells Journal of Non-Crystalline Solids, 114 (2). pp. 552-554. ISSN 0022-3093 Ganguly, Gautam ; De, S. C. ; Ray, Swati ; Barua, A. K. (1989) PECVD of microcrystalline silicon carbon alloy thin films Journal of Non-Crystalline Solids, 114 (2). pp. 822-824. ISSN 0022-3093 Basu, N. ; Ganguly, Gautam ; Ray, Swati ; Barua, A. K. (1989) Phosphorus doping and photoinduced changes in hydrogenated amorphous silicon-carbon alloy films Japanese Journal of Applied Physics, 28 (10). pp. 1776-1779. ISSN 0021-4922 Ganguly, Gautam ; Dutta, Joydeep ; Ray, Swati ; Barua, A. K. (1989) Radiofrequency-plasma-deposited hydrogenated fluorinated silicon-carbon alloy films Physical Review B, 40 (6). pp. 3830-3836. ISSN 0163-1829 Dea, S. C. ; Ray, Swati ; Barua, A. K. (1988) Changes in the properties of glow-discharge-deposited microcrystalline silicon films with thickness Thin Solid Films, 167 (1-2). pp. 121-128. ISSN 0040-6090 Ray, Swati ; De, S. C. ; Barua, A. K. (1988) Characterization of microcrystalline silicon films prepared by the glow discharge method under different deposition conditions Thin Solid Films, 156 (2). pp. 277-286. ISSN 0040-6090 Ray, Swati ; Ganguly, Gautam ; Barua, A. K. (1987) Influence of deposition parameters on the properties of boron-doped amorphous silicon-carbide films Journal of Applied Physics, 62 (9). p. 3917. ISSN 0021-8979 Banerjee, Ratnabali ; Ray, Swati ; Batabyal, A. K. ; Barua, A. K. ; Sen, Suchitra (1985) Structural characterization of tin doped indium oxide films prepared by magnetron sputtering Journal of Materials Science, 20 (8). pp. 2937-2944. ISSN 0022-2461 Chaudhuri, P. ; Ray, Swati ; Batabyal, A. K. ; Barua, A. K. (1984) Properties of undoped and p-type hydrogenated amorphous silicon carbide films Thin Solid Films, 121 (3). pp. 233-246. ISSN 0040-6090 Ray, Swati ; Chaudhuri, P. ; Batabyal, A. K. ; Barua, A. K. (1984) Electronic and optical properties of boron doped hydrogenated amorphous silicon thin films Solar Energy Materials, 10 (3-4). pp. 335-347. ISSN 0165-1633 Chaudhuria, P. ; Ray, Swati ; Barua, A. K. (1984) The effect of mixing hydrogen with silane on the electronic and optical properties of hydrogenated amorphous silicon thin films Thin Solid Films, 113 (4). pp. 261-270. ISSN 0040-6090 Batabyal, A.K. ; Chaudhuri, P. ; Barua, A. K. ; Ray, Swati (1984) The influence of deposition parameters on the properties of amorphous silicon thin films produced by the magnetron sputtering method Thin Solid Films, 112 (1). pp. 51-60. ISSN 0040-6090 Ray, Swati ; Chaudhuri, P. ; Batabyal, A. K. ; Barua, A. K. (1983) Some properties of intrinsic and phosphorus doped amorphous silicon thin films Japanese Journal of Applied Physics, 22 (1). pp. 23-28. ISSN 0021-4922 Ray, Swati ; Banerjee, Ratnabali ; Barua, A. K. (1982) Some properties of indium-and antimony-doped vacuum-evaporated CdS thin films Thin Solid Films, 87 (1). pp. 63-71. ISSN 0040-6090 Ray, Swati ; Banerjee, Ratnabali ; Barua, A. K. (1981) The properties of bismuth-doped vacuum-evaporated CdS films Thin Solid Films, 79 (2). pp. 155-160. ISSN 0040-6090 Ray, Swati ; Banerjee, Ratnabali ; Barua, A. K. (1980) Properties of vacuum-evaporated CdS thin films Japanese Journal of Applied Physics, 19 (10). pp. 1889-1895. ISSN 0021-4922 |

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