Items where Author is "Olsen, C."Group by: Item Type | No Grouping Number of items: 7. Sandhya, C. ; Oak, Apoorva B. ; Chattar, Nihit ; Ganguly, Udayan ; Olsen, C. ; Seutter, S. M. ; Date, L. ; Hung, R. ; Vasi, Juzer ; Mahapatra, Souvik (2010) Study of P/E cycling endurance induced degradation in SANOS memories under NAND (FN/FN) operation IEEE Transactions on Electron Devices, 57 (7). pp. 1548-1558. ISSN 0018-9383 Sandhya, C. ; Oak, Apoorva B. ; Chattar, Nihit ; Joshi, Ameya S. ; Ganguly, Udayan ; Olsen, C. ; Seutter, S. M. ; Date, L. ; Hung, R. ; Vasi, Juzer ; Mahapatra, Souvik (2009) Impact of SiN composition variation on SANOS memory performance and reliability under NAND (FN/FN) operation IEEE Transactions on Electron Devices, 56 (12). pp. 3123-3132. ISSN 0018-9383 Sandhya, C. ; Ganguly, U. ; Chattar, N. ; Olsen, C. ; Seutter, S. M. ; Date, L. ; Hung, R. ; Vasi, J. M. ; Mahapatra, S. (2009) Effect of SiN on Performance and Reliability of Charge Trap Flash (CTF) under Fowler–Nordheim tunneling program/erase operation IEEE Electron Device Letters, 30 (2). pp. 171-173. ISSN 0741-3106 Sandhya, C. ; Ganguly, U. ; Singh, K. K. ; Singh, P. K. ; Olsen, C. ; Seutter, S. M. ; Hung, R. ; Conti, G. ; Ahmed, K. ; Krishna, N. ; Vasi, J. ; Mahapatra, S. (2008) Nitride engineering and the effect of interfaces on Charge Trap Flash performance and reliability In: 2008 IEEE International Reliability Physics Symposium, IRPS 2008, 27 April-1 May, 2008, Phoenix, AZ, USA. Kapila, G. ; Goyal, N. ; Maheta, V. D. ; Olsen, C. ; Ahmed, K. ; Mahapatra, S. (2008) A comprehensive study of flicker noise in plasma nitrided SiON p-MOSFETs: process dependence of pre-existing and NBTI stress generated trap distribution profiles In: 2008 IEEE International Conference on Electron Devices Meeting (IEDM), 15-17 Dec, 2008, San Francisco, CA, USA. Sandhya, C. ; Ganguly, U. ; Singh, K. K. ; Olsen, C. ; Seutter, S. M. ; Conti, G. ; Ahmed, K. ; Krishna, N. ; Vasi, J. ; Mahapatra, S. (2008) The effect of band gap engineering of the nitride storage node on performance and reliability of charge trap flash In: 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2008, 7-11 July, 2008, Singapore, Singapore. Kumar, E. N. ; Maheta, V. D. ; Purawat, S. ; Islam, A. E. ; Olsen, C. ; Ahmed, K. ; Alam, M. A. ; Mahapatra, S. (2007) Material dependence of NBTI physical mechanism in Silicon Oxynitride (SiON) p-MOSFETs: A comprehensive study by Ultra-fast On-the-fly (UF-OTF) IDLIN technique In: 2007 IEEE International Electron Devices Meeting, IEDM. |

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