Items where Author is "Murali, K. V. R. M."Group by: Item Type | No Grouping Jump to: Article | Conference or Workshop Item Number of items: 7. ArticleKonar, Aniruddha ; Mathew, John ; Nayak, Kaushik ; Bajaj, Mohit ; Pandey, Rajan K. ; Dhara, Sajal ; Murali, K. V. R. M. ; Deshmukh, Mandar M. (2015) Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors Nano Letters, 15 (3). pp. 1684-1690. ISSN 1530-6984 Mahapatra, Souvik ; De, Sandip ; Joshi, Kaustubh ; Mukhopadhyay, Subhadeep ; Pandey, Rajan K. ; Murali, K. V. R. M. (2013) Understanding process impact of hole traps and NBTI in HKMG p-MOSFETs using measurements and atomistic simulations IEEE Electron Device Letters, 34 (8). pp. 963-965. ISSN 0741-3106 Ulman, Kanchan ; Sathiyanarayanan, Rajesh ; Pandey, R. K. ; Murali, K. V. R. M. ; Narasimhan, Shobhana (2013) Dielectric properties of Si3−ξGeξN4 and Si3−ξCξN4: A density functional study Journal of Applied Physics, 113 (23). p. 234102. ISSN 0021-8979 Asra, R. ; Shrivastava, M. ; Murali, K. V. R. M. ; Pandey, R. K. ; Gossner, H. ; Rao, V. R. (2011) Tunnel FET for VDD scaling below 0.6V with CMOS comparable performance IEEE Transactions on Electron Devices, 58 (7). pp. 1855-1863. ISSN 0018-9383 Murali, K. V. R. M. ; Sinha, Neeraj ; Mahesh, T. S. ; Levitt, Malcolm H. ; Ramanathan, K. V. ; Anil Kumar (2002) Quantum-information processing by nuclear magnetic resonance: experimental implementation of half-adder and subtractor operations using an oriented spin-7/2 system Physical Review A, 66 (2). pp. 022313_1-022313_5. ISSN 1050-2947 Conference or Workshop ItemMukhopadhyay, S. ; Joshi, K. ; Chaudhary, V. ; Goel, N. ; De, S. ; Pandey, R. K. ; Murali, K. V. R. M. ; Mahapatra, S. (2014) Trap Generation in IL and HK layers during BTI/TDDB stress in scaled HKMG N and P MOSFETs In: 2014 IEEE International Conference on Reliability Physics Symposium, 1-5 June, 2014, Waikoloa, HI, USA. Goel, N. ; Mukhopadhyay, S. ; Nanaware, N. ; De, S. ; Pandey, R. K. ; Murali, K. V. R. M. ; Mahapatra, S. (2014) A comprehensive DC/AC model for ultra-fast NBTI in deep EOT scaled HKMG p-MOSFETs In: 2014 IEEE International Conference on Reliability Physics Symposium, 1-5, June 2014, Waikoloa, HI, USA. |

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