Items where Author is "Motzny, Steve"

Article

Tiwari, Ravi ; Parihar, Narendra ; Thakor, Karansingh ; Wong, Hiu Yung ; Motzny, Steve ; Choi, Munkang ; Moroz, Victor ; Mahapatra, Souvik (2019) A 3-D TCAD Framework for NBTI, Part-II: Impact of Mechanical Strain, Quantum Effects, and FinFET Dimension Scaling IEEE Transactions on Electron Devices, 66 (5). pp. 2093-2099. ISSN 0018-9383

Tiwari, Ravi ; Parihar, Narendra ; Thakor, Karansingh ; Wong, Hiu Yung ; Motzny, Steve ; Choi, Munkang ; Moroz, Victor ; Mahapatra, Souvik (2019) A 3-D TCAD Framework for NBTI—Part I: Implementation Details and FinFET Channel Material Impact IEEE Transactions on Electron Devices, 66 (5). pp. 2086-2092. ISSN 0018-9383

Conference or Workshop Item

Wong, Hiu Yung ; Motzny, Steve ; Moroz, Victor ; Mishra, Subrat ; Mahapatra, Souvik (2017) FinFET NBTI degradation reduction and recovery enhancement through hydrogen incorporation and self-heating In: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 7-9 Sept. 2017, Kamakura, Japan.

Mishra, Subrat ; Wong, Hiu Yung ; Tiwari, Ravi ; Chaudhary, Ankush ; Parihar, Narendra ; Rao, Rakesh ; Motzny, Steve ; Moroz, Victor ; Mahapatra, Souvik (2017) Predictive TCAD for NBTI stress-recovery in various device architectures and channel materials In: 2017 IEEE International Conference on Reliability Physics Symposium (IRPS), 2-6 April 2017, Monterey, CA, USA.